Research graph
References from Measurements of Carrier Concentration, Mobility and Crystalline Properties Along the Growth Direction in MOCVD-Grown GaN-on-Sapphire by Cross-Section Raman Spectroscopy. Local targets link to admitted publications; unresolved targets remain external evidence.
GaN growth on sapphire
10.1016/s0022-0248(97)00082-1 · 1997 · External reference
10.1007/978-3-662-04156-7
10.1007/978-3-662-04156-7 · External reference
Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation
10.1103/revmodphys.87.1133 · 2015 · External reference
Advancing flexible optoelectronics with III-nitride semiconductors: From materials to applications
10.1038/s41377-025-02052-0 · 2026 · External reference
10.1007/978-3-031-63238-9
10.1007/978-3-031-63238-9 · External reference
InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes
10.1364/ol.452477 · 2022 · External reference
High-Power AlGaN-Based Ultrathin Tunneling Junction Deep Ultraviolet Light-Emitting Diodes
10.1002/lpor.202300464 · 2024 · External reference
10.1201/9781032644912
10.1201/9781032644912 · External reference
Raman scattering properties of GaN materials and structures under visible and ultraviolet excitations
10.1002/jrs.765 · 2001 · External reference
A comparative study of high-resolution transmission electron microscopy, atomic force microscopy and infrared spectroscopy for GaN thin films grown on sapphire by metalorganic chemical vapor deposition
10.1016/j.surfcoat.2005.07.018 · 2006 · External reference
Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy
10.1038/s41598-024-53478-2 · 2024 · External reference
Correlations between spatially resolved Raman shifts and dislocation density in GaN films
10.1063/1.1449523 · 2002 · External reference
Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films
10.1063/1.1519342 · 2002 · External reference
Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD
10.1088/1674-4926/30/7/073001 · 2009 · External reference
Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: Confocal Raman microscopy
10.1088/0268-1242/28/10/105011 · 2013 · External reference
Optical characterization of GaN-based LED devices through spectroscopic ellipsometry
10.1016/j.optlastec.2025.112560 · 2025 · External reference
Polarization-independent grating in a GaN-on-sapphire photonic integrated circuit
10.1364/oe.487389 · 2023 · External reference
Report of GaN HEMTs on 8-in Sapphire
10.1109/ted.2024.3403791 · 2024 · External reference
10.3390/mi16121336
10.3390/mi16121336 · External reference
Direct investigation of localized leakage currents in GaN-on-sapphire pn-diode
10.1038/s41598-025-25338-0 · 2025 · External reference
10.3390/electronics14214146
10.3390/electronics14214146 · External reference
Graded barrier AlGaN/GaN MOS-HEMT for ultra-sensitive and label-free detection of SARS-CoV-2
10.1016/j.micrna.2025.208379 · 2026 · External reference
Hole transport analysis in N-polar p-GaN
10.1063/5.0316562 · 2026 · External reference
The trade-off between electrical performance and structural quality in silicon (n-type) and magnesium (p-type)-doped a-plane gallium nitride (GaN) on r-plane sapphire
10.1007/s10854-026-17256-2 · 2026 · External reference
In situ spectroscopic ellipsometry study of GaN nucleation layer growth and annealing on sapphire in metal-organic vapor-phase epitaxy
10.1063/1.1999033 · 2005 · External reference
The effect of AlGaN and SiN interlayers on GaN/Si(111)
10.1002/pssc.200460601 · 2005 · External reference
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
10.1063/1.120191 · 1997 · External reference
10.3390/cryst10070582
10.3390/cryst10070582 · External reference
10.3390/ma17122921
10.3390/ma17122921 · External reference
Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers
10.1103/physrevb.95.144205 · 2017 · External reference
Urbach–Martienssen tails in a wurtzite GaN epilayer
10.1063/1.119196 · 1997 · External reference
Impact of carrier-density screening on Urbach-tail energies and optical polarization in (Al,Ga)N quantum well systems
10.1103/x5d6-w3cp · 2025 · External reference
Life on the Urbach Edge
10.1021/acs.jpclett.2c01812 · 2022 · External reference
Temperature Dependence of the Urbach Energy in Lead Iodide Perovskites
10.1021/acs.jpclett.9b00138 · 2019 · External reference
Residual stress relaxation in GaN/sapphire circular pillars measured by Raman scattering spectroscopy
10.1016/j.jcrysgro.2008.09.145 · 2008 · External reference
Spectroscopic ellipsometry and correlated studies of GaN films on 4H-SiC by MOCVD
10.1016/j.vacuum.2025.114589 · 2025 · External reference
Raman scattering properties of GaN materials and structures under visible and ultraviolet excitations
10.1002/jrs.765 · ExternalCitation · doi-reference
High-Power AlGaN-Based Ultrathin Tunneling Junction Deep Ultraviolet Light-Emitting Diodes
10.1002/lpor.202300464 · ExternalCitation · doi-reference
The effect of AlGaN and SiN interlayers on GaN/Si(111)
10.1002/pssc.200460601 · ExternalCitation · doi-reference
10.1007/978-3-031-63238-9
10.1007/978-3-031-63238-9 · ExternalCitation · doi-reference
10.1007/978-3-662-04156-7
10.1007/978-3-662-04156-7 · ExternalCitation · doi-reference
The trade-off between electrical performance and structural quality in silicon (n-type) and magnesium (p-type)-doped a-plane gallium nitride (GaN) on r-plane sapphire
10.1007/s10854-026-17256-2 · ExternalCitation · doi-reference
Residual stress relaxation in GaN/sapphire circular pillars measured by Raman scattering spectroscopy
10.1016/j.jcrysgro.2008.09.145 · ExternalCitation · doi-reference
Graded barrier AlGaN/GaN MOS-HEMT for ultra-sensitive and label-free detection of SARS-CoV-2
10.1016/j.micrna.2025.208379 · ExternalCitation · doi-reference
Optical characterization of GaN-based LED devices through spectroscopic ellipsometry
10.1016/j.optlastec.2025.112560 · ExternalCitation · doi-reference
A comparative study of high-resolution transmission electron microscopy, atomic force microscopy and infrared spectroscopy for GaN thin films grown on sapphire by metalorganic chemical vapor deposition
10.1016/j.surfcoat.2005.07.018 · ExternalCitation · doi-reference
Spectroscopic ellipsometry and correlated studies of GaN films on 4H-SiC by MOCVD
10.1016/j.vacuum.2025.114589 · ExternalCitation · doi-reference
GaN growth on sapphire
10.1016/s0022-0248(97)00082-1 · ExternalCitation · doi-reference
Life on the Urbach Edge
10.1021/acs.jpclett.2c01812 · ExternalCitation · doi-reference
Temperature Dependence of the Urbach Energy in Lead Iodide Perovskites
10.1021/acs.jpclett.9b00138 · ExternalCitation · doi-reference
Advancing flexible optoelectronics with III-nitride semiconductors: From materials to applications
10.1038/s41377-025-02052-0 · ExternalCitation · doi-reference
Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy
10.1038/s41598-024-53478-2 · ExternalCitation · doi-reference
Direct investigation of localized leakage currents in GaN-on-sapphire pn-diode
10.1038/s41598-025-25338-0 · ExternalCitation · doi-reference
Urbach–Martienssen tails in a wurtzite GaN epilayer
10.1063/1.119196 · ExternalCitation · doi-reference
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
10.1063/1.120191 · ExternalCitation · doi-reference
Correlations between spatially resolved Raman shifts and dislocation density in GaN films
10.1063/1.1449523 · ExternalCitation · doi-reference
Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films
10.1063/1.1519342 · ExternalCitation · doi-reference
In situ spectroscopic ellipsometry study of GaN nucleation layer growth and annealing on sapphire in metal-organic vapor-phase epitaxy
10.1063/1.1999033 · ExternalCitation · doi-reference
Hole transport analysis in N-polar p-GaN
10.1063/5.0316562 · ExternalCitation · doi-reference
Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: Confocal Raman microscopy
10.1088/0268-1242/28/10/105011 · ExternalCitation · doi-reference
Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD
10.1088/1674-4926/30/7/073001 · ExternalCitation · doi-reference
Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers
10.1103/physrevb.95.144205 · ExternalCitation · doi-reference
Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation
10.1103/revmodphys.87.1133 · ExternalCitation · doi-reference
Impact of carrier-density screening on Urbach-tail energies and optical polarization in (Al,Ga)N quantum well systems
10.1103/x5d6-w3cp · ExternalCitation · doi-reference
Report of GaN HEMTs on 8-in Sapphire
10.1109/ted.2024.3403791 · ExternalCitation · doi-reference
10.1201/9781032644912
10.1201/9781032644912 · ExternalCitation · doi-reference
Polarization-independent grating in a GaN-on-sapphire photonic integrated circuit
10.1364/oe.487389 · ExternalCitation · doi-reference
InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes
10.1364/ol.452477 · ExternalCitation · doi-reference
10.3390/cryst10070582
10.3390/cryst10070582 · ExternalCitation · doi-reference
10.3390/electronics14214146
10.3390/electronics14214146 · ExternalCitation · doi-reference
10.3390/ma17122921
10.3390/ma17122921 · ExternalCitation · doi-reference
10.3390/mi16121336
10.3390/mi16121336 · ExternalCitation · doi-reference
