Research graph
References from Low-Temperature and Room-Temperature Surface-Activated Au–Au Bonding: Surface Requirements, Preparation Methods, and Emerging Applications. Local targets link to admitted publications; unresolved targets remain external evidence.
High-strength Au–Au bonding for temperature and pressure integrated sensor
10.1016/j.jmrt.2025.01.118 · 2025 · External reference
10.3390/mi12080946
10.3390/mi12080946 · External reference
Unresolved reference
External reference
Development of low temperature Cu-Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)
10.1016/j.microrel.2021.114412 · 2021 · External reference
Low temperature bonding technology for 3D integration
10.1016/j.microrel.2011.03.038 · 2012 · External reference
Wafer direct bonding: Tailoring adhesion between brittle materials
1999 · External reference
10.1126/sciadv.abl6228
10.1126/sciadv.abl6228 · External reference
State-of-the-Art and Outlooks of Chiplets Heterogeneous Integration and Hybrid Bonding
10.4071/imaps.1542066 · 2021 · External reference
10.1109/eptc47984.2019.9026700
10.1109/eptc47984.2019.9026700 · External reference
A Review on Hybrid Bonding Interconnection and Its Characterization
10.1109/mnano.2024.3358714 · 2024 · External reference
10.1109/ectc32862.2020.00098
10.1109/ectc32862.2020.00098 · External reference
A Review of Mechanism and Technology of Hybrid Bonding
10.1115/1.4065650 · 2025 · External reference
10.1109/ectc.2002.1008081
10.1109/ectc.2002.1008081 · External reference
Low temperature gold-to-gold bonded semiconductor disk laser
10.1109/lpt.2013.2258147 · 2013 · External reference
Unresolved reference
External reference
10.1109/esime.2011.5765834
10.1109/esime.2011.5765834 · External reference
Influence of fabrication parameters on bond strength of adhesively bonded flip-chip interconnects
10.1080/01694243.2014.891349 · 2014 · External reference
10.1109/transducers61432.2025.11109896
10.1109/transducers61432.2025.11109896 · External reference
10.1109/icept63120.2024.10668562
10.1109/icept63120.2024.10668562 · External reference
10.1007/978-3-030-80135-9
10.1007/978-3-030-80135-9 · External reference
10.1109/estc60143.2024.10712121
10.1109/estc60143.2024.10712121 · External reference
10.1109/eptc.2005.1614435
10.1109/eptc.2005.1614435 · External reference
Temperature and pressure dependence in thermocompression gold stud bonding
10.1016/j.tsf.2005.09.071 · 2006 · External reference
Self-assembled monolayers for reduced temperature direct metal thermocompression bonding
10.1063/1.2768869 · 2007 · External reference
Enhancing direct metal bonding with self-assembled monolayers
10.1016/j.tsf.2005.09.070 · 2006 · External reference
Effects of excimer irradiation treatment on thermocompression Au-Au bonding
10.1143/jjap.49.06gn12 · 2010 · External reference
Characterization of interfacial morphology of low temperature, low pressure Au-Au thermocompression bonding
10.7567/jjap.57.02bc03 · 2018 · External reference
Wafer Level Hermetic Packaging for RF-MEMS Devices Using Electroplated Gold Layers
10.4028/www.scientific.net/kem.326-328.617 · 2006 · External reference
10.1109/iemt.2008.5507813
10.1109/iemt.2008.5507813 · External reference
Leak Rates and Residual Gas Pressure in Cavities Sealed by Metal Thermo-Compression Bonding and Silicon Direct Bonding
10.1149/06405.0305ecst · 2014 · External reference
Wafer-level Au-Au bonding in the 350-450 °C temperature range
10.1088/0960-1317/24/8/084002 · 2014 · External reference
High brightness ODR LED based on Au/Au wafer bonding
2009 · External reference
Direct Au–Au bonding technology for high performance GaAs/AlGaAs quantum cascade lasers
10.1007/s11082-014-0031-z · 2015 · External reference
10.1109/ectc.2019.00088
10.1109/ectc.2019.00088 · External reference
10.1109/ectc32862.2020.00291
10.1109/ectc32862.2020.00291 · External reference
10.1109/imws-amp53428.2021.9643992
10.1109/imws-amp53428.2021.9643992 · External reference
10.20944/preprints202304.0624.v1
10.20944/preprints202304.0624.v1 · External reference
Sandwich Structure MEMS Accelerometer Packaging via Wafer-Level Tri-Layer Simultaneous Bonding
10.1109/jsen.2025.3628476 · 2025 · External reference
Effect of surface roughness on room-temperature wafer bonding by Ar beam surface activation
10.1143/jjap.37.4197 · 1998 · External reference
Au hollow pyramidal bumps for low-temperature low-pressure bonding fabricated via Au film transfer method
10.1016/j.sna.2025.116968 · 2025 · External reference
Room-temperature direct bonding of electroplated Au patterns flattened by a thermal imprint process
10.1016/j.mee.2014.02.008 · 2014 · External reference
Replication of atomically smooth surface shape onto electroplated Au patterns by lift-off process and room-temperature Au-Au bonding in atmospheric air
10.1016/j.mee.2014.06.007 · 2014 · External reference
10.1109/icep-iaac.2015.7111056
10.1109/icep-iaac.2015.7111056 · External reference
Room-temperature wafer scale bonding using smoothed Au seal ring surfaces for hermetic sealing
10.7567/jjap.55.016701 · 2016 · External reference
Room-temperature Au–Au bonding in atmospheric air using direct transferred atomically smooth Au film on electroplated patterns
10.1016/j.mee.2017.12.004 · 2018 · External reference
10.23919/ltb-3d.2017.7947452
10.23919/ltb-3d.2017.7947452 · External reference
Growth behavior of au films on SiO2 film and direct transfer for smoothing au surfaces
10.20965/ijat.2019.p0254 · 2019 · External reference
10.1109/ectc32862.2020.00047
10.1109/ectc32862.2020.00047 · External reference
10.3390/mi11050454
10.3390/mi11050454 · External reference
10.23919/icep61562.2024.10535611
10.23919/icep61562.2024.10535611 · External reference
10.23919/icep-iaac64884.2025.11002886
10.23919/icep-iaac64884.2025.11002886 · External reference
Room temperature bonding of Au plating through surface smoothing using polyimide template stripping
10.1016/j.sna.2025.116211 · 2025 · External reference
10.3390/s22218144
10.3390/s22218144 · External reference
10.1109/transducers.2015.7181165
10.1109/transducers.2015.7181165 · External reference
10.1109/leos.2005.1547908
10.1109/leos.2005.1547908 · External reference
10.1117/12.653072
10.1117/12.653072 · External reference
10.1117/12.690741
10.1117/12.690741 · External reference
10.1109/impact.2006.312175
10.1109/impact.2006.312175 · External reference
Low-temperature direct bonding of flip-chip mountable VCSELs with Au-Au surface activation
10.1541/ieejsmas.128.266 · 2008 · External reference
Passive alignment and mounting of LiNbO3 waveguide chips on Si substrates by low-temperature solid-state bonding of Au
10.1109/jstqe.2010.2093871 · 2011 · External reference
Room-temperature bonding of vertical-cavity surface-emitting laser chips on Si substrates using Au microbumps in ambient air
10.1143/apex.1.112201 · 2008 · External reference
10.1109/icep.2016.7486864
10.1109/icep.2016.7486864 · External reference
Room-temperature bonding of wafers with smooth au thin films in ambient air using a surface-activated bonding method
10.1587/transele.e100.c.156 · 2017 · External reference
10.1109/icep-iaac.2015.7111055
10.1109/icep-iaac.2015.7111055 · External reference
10.1109/omn.2018.8454605
10.1109/omn.2018.8454605 · External reference
10.1109/icsj.2018.8602919
10.1109/icsj.2018.8602919 · External reference
Investigation of plasma treatment conditions for wafer-scale room-temperature bonding using ultrathin Au films in ambient air
10.1541/ieejsmas.139.217 · 2019 · External reference
10.23919/icep61562.2024.10535697
10.23919/icep61562.2024.10535697 · External reference
10.1109/omn.2014.6924607
10.1109/omn.2014.6924607 · External reference
Room-temperature gold-gold bonding method based on argon and hydrogen gas mixture atmospheric-pressure plasma treatment for optoelectronic device integration
10.1587/transele.e99.c.339 · 2016 · External reference
10.23919/icep.2019.8733602
10.23919/icep.2019.8733602 · External reference
10.1109/icep-iaac.2015.7111132
10.1109/icep-iaac.2015.7111132 · External reference
10.1109/ltb-3d.2012.6238082
10.1109/ltb-3d.2012.6238082 · External reference
10.1109/icsj62869.2024.10804698
10.1109/icsj62869.2024.10804698 · External reference
10.1109/icsj66986.2025.11302738
10.1109/icsj66986.2025.11302738 · External reference
Flexible no-drift data glove using ultrathin silicon for the metaverse
10.1016/j.device.2024.100686 · 2025 · External reference
10.23919/icep58572.2023.10129675
10.23919/icep58572.2023.10129675 · External reference
10.1109/ectc32862.2020.00120
10.1109/ectc32862.2020.00120 · External reference
Low temperature Au-Au bonding using Ag nanoparticles as intermediate for die attachment in power device packaging
10.1016/j.apsusc.2022.153436 · 2022 · External reference
Review of Low-Temperature Bonding Technologies and Their Application in Optoelectronic Devices
10.1002/ecj.11805 · 2016 · External reference
10.1109/icep.2014.6826773
10.1109/icep.2014.6826773 · External reference
10.3390/mi16040439
10.3390/mi16040439 · External reference
10.1109/icep-iaac.2015.7111096
10.1109/icep-iaac.2015.7111096 · External reference
Fabrication of bottom-emitting organic light-emitting diode panels interconnected with encapsulation substrate by Au-Au flip-chip bonding and capillary-driven filling process
10.1016/j.mee.2016.04.012 · 2016 · External reference
10.1109/ectc.2013.6575770
10.1109/ectc.2013.6575770 · External reference
10.23919/icep.2018.8374302
10.23919/icep.2018.8374302 · External reference
Surface activated bonding of Ti/Au and Ti/Pt/Au films after vacuum annealing for MEMS packaging
10.1016/j.mee.2018.05.008 · 2018 · External reference
10.3390/mi9110553
10.3390/mi9110553 · External reference
LiTaO3/silicon composite wafers for the fabrication of low loss low TCF high coupling resonators for filter applications
10.1016/j.phpro.2015.08.210 · 2015 · External reference
10.1109/ultsym.2010.5935651
10.1109/ultsym.2010.5935651 · External reference
10.1109/ultsym.2011.0487
10.1109/ultsym.2011.0487 · External reference
Lithium-niobate-based surface acoustic wave oscillator directly integrated with CMOS sustaining amplifier
10.1109/tuffc.2012.2384 · 2012 · External reference
10.1109/fcs.2014.6859909
10.1109/fcs.2014.6859909 · External reference
Direct Bonding of Gold Nanomeshes at Low Temperature for Flexible and Breathable Electronics
10.1021/acsami.6c04667 · 2026 · External reference
10.1109/eptc50525.2020.9315136
10.1109/eptc50525.2020.9315136 · External reference
Room temperature bonding of Au assisted by self-assembled monolayer
10.1063/5.0128187 · 2023 · External reference
10.3390/mi16080878
10.3390/mi16080878 · External reference
10.1109/icep.2014.6826713
10.1109/icep.2014.6826713 · External reference
Metal-bonding-based hermetic wafer-level MEMS packaging technology using in-plane feedthrough: Hermeticity and high frequency characteristics of thick gold film feedthrough
10.1002/eej.23193 · 2019 · External reference
10.1109/eptc67330.2025.11392136
10.1109/eptc67330.2025.11392136 · External reference
Review of Low-Temperature Bonding Technologies and Their Application in Optoelectronic Devices
10.1002/ecj.11805 · ExternalCitation · doi-reference
Metal-bonding-based hermetic wafer-level MEMS packaging technology using in-plane feedthrough: Hermeticity and high frequency characteristics of thick gold film feedthrough
10.1002/eej.23193 · ExternalCitation · doi-reference
10.1007/978-3-030-80135-9
10.1007/978-3-030-80135-9 · ExternalCitation · doi-reference
Direct Au–Au bonding technology for high performance GaAs/AlGaAs quantum cascade lasers
10.1007/s11082-014-0031-z · ExternalCitation · doi-reference
Low temperature Au-Au bonding using Ag nanoparticles as intermediate for die attachment in power device packaging
10.1016/j.apsusc.2022.153436 · ExternalCitation · doi-reference
Flexible no-drift data glove using ultrathin silicon for the metaverse
10.1016/j.device.2024.100686 · ExternalCitation · doi-reference
High-strength Au–Au bonding for temperature and pressure integrated sensor
10.1016/j.jmrt.2025.01.118 · ExternalCitation · doi-reference
Room-temperature direct bonding of electroplated Au patterns flattened by a thermal imprint process
10.1016/j.mee.2014.02.008 · ExternalCitation · doi-reference
Replication of atomically smooth surface shape onto electroplated Au patterns by lift-off process and room-temperature Au-Au bonding in atmospheric air
10.1016/j.mee.2014.06.007 · ExternalCitation · doi-reference
Fabrication of bottom-emitting organic light-emitting diode panels interconnected with encapsulation substrate by Au-Au flip-chip bonding and capillary-driven filling process
10.1016/j.mee.2016.04.012 · ExternalCitation · doi-reference
Room-temperature Au–Au bonding in atmospheric air using direct transferred atomically smooth Au film on electroplated patterns
10.1016/j.mee.2017.12.004 · ExternalCitation · doi-reference
Surface activated bonding of Ti/Au and Ti/Pt/Au films after vacuum annealing for MEMS packaging
10.1016/j.mee.2018.05.008 · ExternalCitation · doi-reference
Low temperature bonding technology for 3D integration
10.1016/j.microrel.2011.03.038 · ExternalCitation · doi-reference
Development of low temperature Cu-Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)
10.1016/j.microrel.2021.114412 · ExternalCitation · doi-reference
LiTaO3/silicon composite wafers for the fabrication of low loss low TCF high coupling resonators for filter applications
10.1016/j.phpro.2015.08.210 · ExternalCitation · doi-reference
Room temperature bonding of Au plating through surface smoothing using polyimide template stripping
10.1016/j.sna.2025.116211 · ExternalCitation · doi-reference
Au hollow pyramidal bumps for low-temperature low-pressure bonding fabricated via Au film transfer method
10.1016/j.sna.2025.116968 · ExternalCitation · doi-reference
Enhancing direct metal bonding with self-assembled monolayers
10.1016/j.tsf.2005.09.070 · ExternalCitation · doi-reference
Temperature and pressure dependence in thermocompression gold stud bonding
10.1016/j.tsf.2005.09.071 · ExternalCitation · doi-reference
Direct Bonding of Gold Nanomeshes at Low Temperature for Flexible and Breathable Electronics
10.1021/acsami.6c04667 · ExternalCitation · doi-reference
Self-assembled monolayers for reduced temperature direct metal thermocompression bonding
10.1063/1.2768869 · ExternalCitation · doi-reference
Room temperature bonding of Au assisted by self-assembled monolayer
10.1063/5.0128187 · ExternalCitation · doi-reference
Influence of fabrication parameters on bond strength of adhesively bonded flip-chip interconnects
10.1080/01694243.2014.891349 · ExternalCitation · doi-reference
Wafer-level Au-Au bonding in the 350-450 °C temperature range
10.1088/0960-1317/24/8/084002 · ExternalCitation · doi-reference
10.1109/ectc.2002.1008081
10.1109/ectc.2002.1008081 · ExternalCitation · doi-reference
10.1109/ectc.2013.6575770
10.1109/ectc.2013.6575770 · ExternalCitation · doi-reference
10.1109/ectc.2019.00088
10.1109/ectc.2019.00088 · ExternalCitation · doi-reference
10.1109/ectc32862.2020.00047
10.1109/ectc32862.2020.00047 · ExternalCitation · doi-reference
10.1109/ectc32862.2020.00098
10.1109/ectc32862.2020.00098 · ExternalCitation · doi-reference
10.1109/ectc32862.2020.00120
10.1109/ectc32862.2020.00120 · ExternalCitation · doi-reference
10.1109/ectc32862.2020.00291
10.1109/ectc32862.2020.00291 · ExternalCitation · doi-reference
10.1109/eptc.2005.1614435
10.1109/eptc.2005.1614435 · ExternalCitation · doi-reference
10.1109/eptc47984.2019.9026700
10.1109/eptc47984.2019.9026700 · ExternalCitation · doi-reference
10.1109/eptc50525.2020.9315136
10.1109/eptc50525.2020.9315136 · ExternalCitation · doi-reference
10.1109/eptc67330.2025.11392136
10.1109/eptc67330.2025.11392136 · ExternalCitation · doi-reference
10.1109/esime.2011.5765834
10.1109/esime.2011.5765834 · ExternalCitation · doi-reference
10.1109/estc60143.2024.10712121
10.1109/estc60143.2024.10712121 · ExternalCitation · doi-reference
10.1109/fcs.2014.6859909
10.1109/fcs.2014.6859909 · ExternalCitation · doi-reference
10.1109/icep-iaac.2015.7111055
10.1109/icep-iaac.2015.7111055 · ExternalCitation · doi-reference
10.1109/icep-iaac.2015.7111056
10.1109/icep-iaac.2015.7111056 · ExternalCitation · doi-reference
10.1109/icep-iaac.2015.7111096
10.1109/icep-iaac.2015.7111096 · ExternalCitation · doi-reference
10.1109/icep-iaac.2015.7111132
10.1109/icep-iaac.2015.7111132 · ExternalCitation · doi-reference
10.1109/icep.2014.6826713
10.1109/icep.2014.6826713 · ExternalCitation · doi-reference
10.1109/icep.2014.6826773
10.1109/icep.2014.6826773 · ExternalCitation · doi-reference
10.1109/icep.2016.7486864
10.1109/icep.2016.7486864 · ExternalCitation · doi-reference
10.1109/icept63120.2024.10668562
10.1109/icept63120.2024.10668562 · ExternalCitation · doi-reference
10.1109/icsj.2018.8602919
10.1109/icsj.2018.8602919 · ExternalCitation · doi-reference
10.1109/icsj62869.2024.10804698
10.1109/icsj62869.2024.10804698 · ExternalCitation · doi-reference
10.1109/icsj66986.2025.11302738
10.1109/icsj66986.2025.11302738 · ExternalCitation · doi-reference
10.1109/iemt.2008.5507813
10.1109/iemt.2008.5507813 · ExternalCitation · doi-reference
10.1109/impact.2006.312175
10.1109/impact.2006.312175 · ExternalCitation · doi-reference
10.1109/imws-amp53428.2021.9643992
10.1109/imws-amp53428.2021.9643992 · ExternalCitation · doi-reference
Sandwich Structure MEMS Accelerometer Packaging via Wafer-Level Tri-Layer Simultaneous Bonding
10.1109/jsen.2025.3628476 · ExternalCitation · doi-reference
Passive alignment and mounting of LiNbO3 waveguide chips on Si substrates by low-temperature solid-state bonding of Au
10.1109/jstqe.2010.2093871 · ExternalCitation · doi-reference
10.1109/leos.2005.1547908
10.1109/leos.2005.1547908 · ExternalCitation · doi-reference
Low temperature gold-to-gold bonded semiconductor disk laser
10.1109/lpt.2013.2258147 · ExternalCitation · doi-reference
10.1109/ltb-3d.2012.6238082
10.1109/ltb-3d.2012.6238082 · ExternalCitation · doi-reference
A Review on Hybrid Bonding Interconnection and Its Characterization
10.1109/mnano.2024.3358714 · ExternalCitation · doi-reference
10.1109/omn.2014.6924607
10.1109/omn.2014.6924607 · ExternalCitation · doi-reference
10.1109/omn.2018.8454605
10.1109/omn.2018.8454605 · ExternalCitation · doi-reference
10.1109/transducers.2015.7181165
10.1109/transducers.2015.7181165 · ExternalCitation · doi-reference
10.1109/transducers61432.2025.11109896
10.1109/transducers61432.2025.11109896 · ExternalCitation · doi-reference
Lithium-niobate-based surface acoustic wave oscillator directly integrated with CMOS sustaining amplifier
10.1109/tuffc.2012.2384 · ExternalCitation · doi-reference
10.1109/ultsym.2010.5935651
10.1109/ultsym.2010.5935651 · ExternalCitation · doi-reference
10.1109/ultsym.2011.0487
10.1109/ultsym.2011.0487 · ExternalCitation · doi-reference
A Review of Mechanism and Technology of Hybrid Bonding
10.1115/1.4065650 · ExternalCitation · doi-reference
10.1117/12.653072
10.1117/12.653072 · ExternalCitation · doi-reference
10.1117/12.690741
10.1117/12.690741 · ExternalCitation · doi-reference
10.1126/sciadv.abl6228
10.1126/sciadv.abl6228 · ExternalCitation · doi-reference
Room-temperature bonding of vertical-cavity surface-emitting laser chips on Si substrates using Au microbumps in ambient air
10.1143/apex.1.112201 · ExternalCitation · doi-reference
Effect of surface roughness on room-temperature wafer bonding by Ar beam surface activation
10.1143/jjap.37.4197 · ExternalCitation · doi-reference
Effects of excimer irradiation treatment on thermocompression Au-Au bonding
10.1143/jjap.49.06gn12 · ExternalCitation · doi-reference
Leak Rates and Residual Gas Pressure in Cavities Sealed by Metal Thermo-Compression Bonding and Silicon Direct Bonding
10.1149/06405.0305ecst · ExternalCitation · doi-reference
Low-temperature direct bonding of flip-chip mountable VCSELs with Au-Au surface activation
10.1541/ieejsmas.128.266 · ExternalCitation · doi-reference
Investigation of plasma treatment conditions for wafer-scale room-temperature bonding using ultrathin Au films in ambient air
10.1541/ieejsmas.139.217 · ExternalCitation · doi-reference
Room-temperature bonding of wafers with smooth au thin films in ambient air using a surface-activated bonding method
10.1587/transele.e100.c.156 · ExternalCitation · doi-reference
Room-temperature gold-gold bonding method based on argon and hydrogen gas mixture atmospheric-pressure plasma treatment for optoelectronic device integration
10.1587/transele.e99.c.339 · ExternalCitation · doi-reference
10.20944/preprints202304.0624.v1
10.20944/preprints202304.0624.v1 · ExternalCitation · doi-reference
Growth behavior of au films on SiO2 film and direct transfer for smoothing au surfaces
10.20965/ijat.2019.p0254 · ExternalCitation · doi-reference
10.23919/icep-iaac64884.2025.11002886
10.23919/icep-iaac64884.2025.11002886 · ExternalCitation · doi-reference
10.23919/icep.2018.8374302
10.23919/icep.2018.8374302 · ExternalCitation · doi-reference
10.23919/icep.2019.8733602
10.23919/icep.2019.8733602 · ExternalCitation · doi-reference
10.23919/icep58572.2023.10129675
10.23919/icep58572.2023.10129675 · ExternalCitation · doi-reference
10.23919/icep61562.2024.10535611
10.23919/icep61562.2024.10535611 · ExternalCitation · doi-reference
10.23919/icep61562.2024.10535697
10.23919/icep61562.2024.10535697 · ExternalCitation · doi-reference
10.23919/ltb-3d.2017.7947452
10.23919/ltb-3d.2017.7947452 · ExternalCitation · doi-reference
10.3390/mi11050454
10.3390/mi11050454 · ExternalCitation · doi-reference
10.3390/mi12080946
10.3390/mi12080946 · ExternalCitation · doi-reference
10.3390/mi16040439
10.3390/mi16040439 · ExternalCitation · doi-reference
10.3390/mi16080878
10.3390/mi16080878 · ExternalCitation · doi-reference
10.3390/mi9110553
10.3390/mi9110553 · ExternalCitation · doi-reference
10.3390/s22218144
10.3390/s22218144 · ExternalCitation · doi-reference
Wafer Level Hermetic Packaging for RF-MEMS Devices Using Electroplated Gold Layers
10.4028/www.scientific.net/kem.326-328.617 · ExternalCitation · doi-reference
State-of-the-Art and Outlooks of Chiplets Heterogeneous Integration and Hybrid Bonding
10.4071/imaps.1542066 · ExternalCitation · doi-reference
Room-temperature wafer scale bonding using smoothed Au seal ring surfaces for hermetic sealing
10.7567/jjap.55.016701 · ExternalCitation · doi-reference
Characterization of interfacial morphology of low temperature, low pressure Au-Au thermocompression bonding
10.7567/jjap.57.02bc03 · ExternalCitation · doi-reference
