References from A New Method for Extracting Interface Trap Density in Short-Channel MOSFETs from Substrate-Bias-Dependent Subthreshold Slopes. Local targets link to admitted publications; unresolved targets remain external evidence.
No reference evidence is available for this admitted work.
References for A New Method for Extracting Interface Trap Density in Short-Channel MOSFETs from Substrate-Bias-Dependent Subthreshold Slopes | ResearchHub - ResearchHub
