References from The Effect of Dopant Outdiffusion on The Neutral Base Recombination Current In Si/SiGe/Si Heterojunction Bipolar Transistors. Local targets link to admitted publications; unresolved targets remain external evidence.
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References for The Effect of Dopant Outdiffusion on The Neutral Base Recombination Current In Si/SiGe/Si Heterojunction Bipolar Transistors | ResearchHub - ResearchHub
