Abstract
ABSTRACT
Antimony selenide (Sb
2
Se
3
) is a promising photoabsorber material for photovoltaics (PVs) owing to its favorable properties, including a high absorption coefficient, an optimal bandgap, earth‐abundant constituents, and low toxicity. In this study, sulfur (S)‐incorporated Sb
2
Se
3
powders were synthesized by substituting Se with S using a solid‐state method. Structural, morphological, and optical analyses showed that increasing sulfur content widened the bandgap from 1.10 to 1.54 eV. Furthermore, DFT calculations supported the experimental bandgap trend. SCAPS‐1D simulations indicated that higher bandgaps increase open‐circuit voltage (
V
oc
) but short‐circuit current density (
J
sc
), with optimal performance at 1.362 eV. The simulated device achieved power conversion efficiency (PCE) of 24.31%,
V
oc
of 0.899 V,
J
sc
of 32.92 mAcm
−2
, and FF of 82.06%. These results highlight sulfur incorporation as an effective approach for tuning the properties of Sb
2
Se
3
‐based PVs.