Abstract
Spectral control of closely spaced excitonic transitions is central to valleytronic photonics, nanoscale light sources, and wavelength-encoded sensing. In monolayer molybdenum disulfide (MoS2), the A and B excitons are separated by only tens of meV, making selective excitonic emission control both fundamentally important and technologically challenging. Although plasmon-enhanced emission of monolayer MoS2 has been widely investigated, systematic control of the relative A- and B-excitonic contributions using vertically oriented hollow nanocavities remains relatively underexplored. Here, we numerically investigate plasmon-enhanced excitonic emission from monolayer MoS2 coupled to vertically oriented hollow gold nanocylindrical cavities through a dielectric spacer. The proposed approach is especially attractive because the exciton selectivity is achieved through purely geometrical and dielectric design, without requiring external fields, chemical doping, or complex active tuning schemes. Using Density Functional Theory and Finite-difference time-domain simulations combined with a photoluminescence-rate framework enable separate evaluation of excitation enhancement, radiative decay modification, nonradiative quenching, and excitonic charge generation. By tuning the cavity aspect ratio, the localized surface plasmon resonance is selectively aligned with either the A- or B-exciton transition, while the spacer thickness and refractive index regulate near-field coupling and the local density of optical states. Under optimized conditions, the excitation rate is enhanced up to 4.34-fold and the radiative decay rate by more than 40-fold, yielding photoluminescence enhancements of 143.85 and 87.27 for the A and B excitons, respectively. The cavity also redistributes the relative excitonic peak intensities, producing exciton-selective peak ratios up to 2.4 times higher than those of bare MoS2. These results establish hollow plasmonic nanocavities as geometry-tunable platforms for exciton-selective emission and charge-generation control in atomically thin semiconductors.