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Liang He, Linhua Li
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Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
10.1016/j.solmat.2013.09.017 · 2014
n-Type Si solar cells with passivating electron contact: identifying sources for efficiency limitations by wafer thickness and resistivity variation
10.1016/j.solmat.2017.05.042 · 2017
Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells
10.1016/j.solmat.2018.06.020 · 2018
Recent advancements in poly-Si/SiO x passivating contacts for high-efficiency silicon solar cells: technology review and perspectives
10.1039/d2ta04730f · 2022
24.7% industrial tunnel oxide passivated contact solar cells prepared through tube PECVD integrating with plasma-assisted oxygen oxidation and in-situ doped polysilicon
10.1016/j.solmat.2023.112396 · 2023
Effect of firing process on electrical properties and efficiency of n-TOPCon solar cells
10.1016/j.solener.2023.112205 · 2024
Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses
10.1038/s41560-021-00805-w · 2021
26.1%-efficient POLO-IBC cells: quantification of electrical and optical loss mechanisms
10.1002/pip.3098 · 2019
26.35%-efficiency and high-bifaciality n-TOPCon solar cells enabled by UV-PS laser-induced selective modification of double-layered SiO x /n+-poly-Si passivating contacts
10.1039/d5ee02742j · 2025
Dual-side electrical refinement enables efficient industrial tunnel oxide passivating contact silicon solar cells
2026
Limiting efficiency of crystalline silicon solar cells due to Coulomb-enhanced auger recombination
10.1002/pip.464 · 2003
Theoretical limiting-efficiency assessment on advanced crystalline silicon solar cells with auger ideality factor and wafer thickness modifications
10.1002/pip.3790 · 2024
Working principle of carrier selective poly-Si/c-Si junctions: is tunnelling the whole story?
10.1016/j.solmat.2016.05.045 · 2016
Pinhole density and contact resistivity of carrier selective junctions with polycrystalline silicon on oxide
10.1063/1.4986924 · 2017
A simple method for pinhole detection in carrier selective POLO-junctions for high efficiency silicon solar cells
10.1016/j.solmat.2017.05.041 · 2017
Carrier transport through the ultrathin silicon-oxide layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells
10.1016/j.solmat.2018.07.025 · 2018
Temperature-dependent contact resistance of carrier selective poly-Si on oxide junctions
10.1016/j.solmat.2018.05.046 · 2018
Charge-carrier dynamics for silicon oxide tunneling junctions mediated by local pinholes
2021
Modeling recombination and contact resistance of poly-Si junctions
10.1002/pip.3327 · 2020
Detailed study on the role of nature and distribution of pinholes and oxide layer on the performance of tunnel oxide passivated contact (TOPCon) solar cell
10.1109/ted.2022.3196327 · 2022
Influence of SiO x film thickness on electrical performance and efficiency of TOPCon solar cells
10.1016/j.solmat.2020.110423 · 2020
Tunnel oxide thickness-dependent dominant carrier transport in crystalline silicon solar cells
10.1016/j.optmat.2024.115711 · 2024
Temperature-induced stoichiometric changes in thermally grown interfacial oxide in tunnel-oxide passivating contacts
10.1016/j.solmat.2020.110713 · 2020
Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism
10.1063/1.119186 · 1997
Two-trap-assisted tunneling model for post-breakdown I-V characteristics in ultrathin silicon dioxide
2006
Impact of mechanical stress on direct and trap-assisted gate leakage currents in n-type silicon metal-oxide-semiconductor capacitors
10.1063/1.2917717 · 2008
The charge transport mechanism and electron trap nature in thermal oxide on silicon
10.1063/1.4960156 · 2016
Unveiling thermal stress-induced trap-assisted tunneling in POLO junctions and its impact on TOPCon solar cells
10.1016/j.solener.2025.113700 · 2025
Understanding the charge transport mechanisms through ultrathin SiO x layers in passivated contacts for high-efficiency silicon solar cells
10.1063/1.5081832 · 2019
Passivating pinholes for large-area and high-efficiency silicon solar cells with tunnel oxide passivated contact
10.1038/s41467-026-70511-2 · 2026
Empirical determination of the energy band gap narrowing in highly doped n+ silicon
10.1063/1.4816694 · 2013
Unresolved referenced work
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The accurate numerical evaluation of half-order Fermi-dirac integrals
10.1002/pssb.2221880206 · 1995
Unresolved referenced work
2015
Numerical analysis of p-type and n-type based carrier-selective contact solar cells with tunneling oxide thickness and bulk properties
10.35848/1347-4065/ab6a2c · 2020
Improved quantitative description of auger recombination in crystalline silicon
10.1103/physrevb.86.165202 · 2012
An improved electrical model for accurate and efficient simulation of TOPCon solar cells
10.1016/j.solmat.2025.113590 · 2025
Tunneling in a finite superlattice
10.1063/1.1654509 · 1973
Carrier conduction in ultrathin nitrided oxide films
10.1063/1.337568 · 1986
Modeling and simulation of tunneling through ultra-thin gate dielectrics
10.1063/1.365364 · 1997
Numerical simulation of carrier-selective electron contacts featuring tunnel oxides
10.1109/jphotov.2015.2455346 · doi-reference
Impact of illumination level and oxide parameters on shockley-read-hall recombination at the Si-SiO x interface
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A unified mobility model for device simulation-I. model equations and concentration dependence
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Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric
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Numerical analysis of tunnel oxide passivated contact solar cell performances for dielectric thin film materials and bulk properties
10.1016/j.solener.2020.11.032 · doi-reference
Interface analysis of ultrathin SiO2 layers between c-Si substrates and phosphorus-doped poly-Si by theoretical surface potential analysis using the injection-dependent lifetime
10.1002/pip.3338 · doi-reference
Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices
10.1063/1.123060 · doi-reference
Accuracy of transfer matrix approaches for solving the effective mass Schrödinger equation
10.1109/jqe.2009.2020998 · doi-reference
Modeling and simulation of tunneling through ultra-thin gate dielectrics
10.1063/1.365364 · doi-reference
Carrier conduction in ultrathin nitrided oxide films
10.1063/1.337568 · doi-reference
Tunneling in a finite superlattice
10.1063/1.1654509 · doi-reference
An improved electrical model for accurate and efficient simulation of TOPCon solar cells
10.1016/j.solmat.2025.113590 · doi-reference
Improved quantitative description of auger recombination in crystalline silicon
10.1103/physrevb.86.165202 · doi-reference
Numerical analysis of p-type and n-type based carrier-selective contact solar cells with tunneling oxide thickness and bulk properties
10.35848/1347-4065/ab6a2c · doi-reference
The accurate numerical evaluation of half-order Fermi-dirac integrals
10.1002/pssb.2221880206 · doi-reference
Empirical determination of the energy band gap narrowing in highly doped n+ silicon
10.1063/1.4816694 · doi-reference
Passivating pinholes for large-area and high-efficiency silicon solar cells with tunnel oxide passivated contact
10.1038/s41467-026-70511-2 · doi-reference
Understanding the charge transport mechanisms through ultrathin SiO x layers in passivated contacts for high-efficiency silicon solar cells
10.1063/1.5081832 · doi-reference
Unveiling thermal stress-induced trap-assisted tunneling in POLO junctions and its impact on TOPCon solar cells
10.1016/j.solener.2025.113700 · doi-reference
The charge transport mechanism and electron trap nature in thermal oxide on silicon
10.1063/1.4960156 · doi-reference
Impact of mechanical stress on direct and trap-assisted gate leakage currents in n-type silicon metal-oxide-semiconductor capacitors
10.1063/1.2917717 · doi-reference
Modeling of stress-induced leakage current in ultrathin oxides with the trap-assisted tunneling mechanism
10.1063/1.119186 · doi-reference
Temperature-induced stoichiometric changes in thermally grown interfacial oxide in tunnel-oxide passivating contacts
10.1016/j.solmat.2020.110713 · doi-reference
Tunnel oxide thickness-dependent dominant carrier transport in crystalline silicon solar cells
10.1016/j.optmat.2024.115711 · doi-reference
Influence of SiO x film thickness on electrical performance and efficiency of TOPCon solar cells
10.1016/j.solmat.2020.110423 · doi-reference
Detailed study on the role of nature and distribution of pinholes and oxide layer on the performance of tunnel oxide passivated contact (TOPCon) solar cell
10.1109/ted.2022.3196327 · doi-reference
Modeling recombination and contact resistance of poly-Si junctions
10.1002/pip.3327 · doi-reference
Temperature-dependent contact resistance of carrier selective poly-Si on oxide junctions
10.1016/j.solmat.2018.05.046 · doi-reference
Carrier transport through the ultrathin silicon-oxide layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells
10.1016/j.solmat.2018.07.025 · doi-reference
A simple method for pinhole detection in carrier selective POLO-junctions for high efficiency silicon solar cells
10.1016/j.solmat.2017.05.041 · doi-reference
Pinhole density and contact resistivity of carrier selective junctions with polycrystalline silicon on oxide
10.1063/1.4986924 · doi-reference
Working principle of carrier selective poly-Si/c-Si junctions: is tunnelling the whole story?
10.1016/j.solmat.2016.05.045 · doi-reference
Theoretical limiting-efficiency assessment on advanced crystalline silicon solar cells with auger ideality factor and wafer thickness modifications
10.1002/pip.3790 · doi-reference
Limiting efficiency of crystalline silicon solar cells due to Coulomb-enhanced auger recombination
10.1002/pip.464 · doi-reference
26.35%-efficiency and high-bifaciality n-TOPCon solar cells enabled by UV-PS laser-induced selective modification of double-layered SiO x /n+-poly-Si passivating contacts
10.1039/d5ee02742j · doi-reference
26.1%-efficient POLO-IBC cells: quantification of electrical and optical loss mechanisms
10.1002/pip.3098 · doi-reference
Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses
10.1038/s41560-021-00805-w · doi-reference
Effect of firing process on electrical properties and efficiency of n-TOPCon solar cells
10.1016/j.solener.2023.112205 · doi-reference
24.7% industrial tunnel oxide passivated contact solar cells prepared through tube PECVD integrating with plasma-assisted oxygen oxidation and in-situ doped polysilicon
10.1016/j.solmat.2023.112396 · doi-reference
Recent advancements in poly-Si/SiO x passivating contacts for high-efficiency silicon solar cells: technology review and perspectives
10.1039/d2ta04730f · doi-reference