Abstract
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Zizheng Wang, Sun Xinlei, TongTao Li, Haotian Dong, Chengyuan Yao, Chunguang Hu
Abstract
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Advanced wafer thinning technology and feasibility test for 3D integration
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openalex
Confidence 95%
datacite
Confidence 0%
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Temperature-dependent dispersion model of float zone crystalline silicon
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In-process endpoint detection of weld seam removal in robotic abrasive belt grinding process
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10.1016/j.mineng.2008.12.002 · 2009
An investigation into the influences of grain size and grinding parameters on surface roughness and grinding forces when grinding
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Modeling of light scattering in different regimes of surface roughness
10.1364/oe.19.009820 · 2011
Research on depth measurement of optically transparent glass via using nondestructive technology
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Linear refractive index and absorption measurements of nonlinear optical liquids in the visible and near-infrared spectral region
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10.1063/1.1831158 · doi-reference
Modeling of light scattering in different regimes of surface roughness
10.1364/oe.19.009820 · doi-reference
Comparison of energy efficiency between ball mills and stirred mills in coarse grinding
10.1016/j.mineng.2008.12.002 · doi-reference
In-process endpoint detection of weld seam removal in robotic abrasive belt grinding process
10.1007/s00170-017-0646-x · doi-reference
Temperature-dependent dispersion model of float zone crystalline silicon
10.1016/j.apsusc.2017.02.021 · doi-reference
Multiple-beam interference spectroscopy: Instrument analysis and spectrum reconstruction
10.1109/tim.2025.3563054 · doi-reference
Integrated metrology for advanced manufacturing
10.1016/j.cirp.2024.05.003 · doi-reference
Surface and subsurface microscopic characteristics in sapphire ultra-precision grinding
10.1016/j.triboint.2022.107710 · doi-reference
Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys
10.1063/1.1764591 · doi-reference
Fine grinding of silicon wafers
10.1016/s0890-6955(00)00101-2 · doi-reference
In situ wireless measurement of grinding force in silicon wafer self-rotating grinding process
10.1016/j.ymssp.2020.107550 · doi-reference
Common-path spectral interferometry for single-shot terahertz electro-optics detection
10.1364/ol.42.004263 · doi-reference
Ultrastable and highly sensitive eddy current displacement sensor using self-temperature compensation
10.1016/j.sna.2013.09.016 · doi-reference
10.1117/12.3012496
10.1117/12.3012496 · doi-reference
In-situ monitoring of microwave plasma-enhanced chemical vapour deposition diamond growth on silicon using spectroscopic ellipsometry
10.1016/j.carbon.2022.10.049 · doi-reference
In situ sensors for oil spill detection and thickness measurement: Methods and challenges
10.1109/tim.2024.3425461 · doi-reference
Real-time monitoring of drop-casting growth of TIPS-pentacene films by in situ differential reflectance spectroscopy
10.1103/physrevb.111.205402 · doi-reference
Fourier-transform spectral interferometry for in situ group delay dispersion monitoring of thin film coating processes
10.1364/oe.24.022516 · doi-reference
Decoupled measurement of silicon-based film and substrate thickness by hybrid reflectance spectroscopy
10.1016/j.optlastec.2024.112143 · doi-reference
Optical method for simultaneous thickness measurements of two layers with a significant thickness difference
10.1364/oe.440507 · doi-reference
3D grinding mark simulation and its applications for silicon wafer grinding
10.1007/s00170-023-12931-8 · doi-reference
Constant probe orientation for fast contact-based inspection of 3D free-form surfaces using (3+2)-axis inspection machines
10.1016/j.precisioneng.2023.06.013 · doi-reference
Step height measurement of microscale thermoplastic polymer specimens using contact stylus profilometry
10.1016/j.precisioneng.2016.02.001 · doi-reference
On-line thickness measurement for two-layer systems on polymer electronic devices
10.3390/s131115747 · doi-reference
Warping of silicon wafers subjected to back-grinding process
10.1016/j.precisioneng.2014.10.009 · doi-reference
Development of automatic transfer adaptors for thin and small-diameter SiC and GaN wafers
10.1557/s43580-025-01130-0 · doi-reference
An experimental investigation of silicon wafer thinning by sequentially using constant-pressure diamond grinding and fixed-abrasive chemical mechanical polishing
10.1016/j.jmatprotec.2021.117453 · doi-reference
Assessment of ultra-thin Si wafer thickness in 3D wafer stacking
10.1016/j.microrel.2009.10.002 · doi-reference
Effects of thickness and crystallographic orientation on tensile properties of thinned silicon wafers
10.1109/tcpmt.2019.2931640 · doi-reference
In-line metrology for characterization and control of extreme wafer thinning of bonded wafers
10.1109/tsm.2018.2885577 · doi-reference
Surface characteristics optimization during wafer-level backside silicon removal for SOI wafers in 3D integration
10.1016/j.apsusc.2025.162366 · doi-reference
10.1109/ectc32862.2020.00020
10.1109/ectc32862.2020.00020 · doi-reference
Ultra-thin wafer technology and applications: A review
10.1016/j.mssp.2019.104681 · doi-reference
Advanced wafer thinning technology and feasibility test for 3D integration
10.1016/j.mee.2012.10.025 · doi-reference