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Shi-Kai Shi, Tao Zou, Shang Lu, Ziyi Deng, Kun Qiao, Binghao Wang
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Insight on the SU-8 resist as passivation layer for transparent Ga2O3–In2O3–ZnO thin-film transistors
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Rapid and up-scalable manufacturing of gigahertz nanogap diodes
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Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
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10.1021/acs.nanolett.5c03551 · doi-reference
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10.1002/adfm.202310264 · doi-reference
ZnO Nanofiber Thin-Film Transistors with Low-Operating Voltages
10.1002/aelm.201700336 · doi-reference
Low voltage operating field effect transistors with composite In2O3–ZnO–ZnGa2O4 nanofiber network as active channel layer
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Sub-3 V ZnO electrolyte-gated transistors and circuits with screen-printed and photo-crosslinked ion gel gate dielectrics: new routes to improved performance
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Low-Power Ionically Tunable Bilayer MoS2 Synaptic Transistors
10.1021/acs.nanolett.5c02372 · doi-reference
Flexible Electro-Optical Perovskite/Electrolyte Synaptic Transistor to Emulate Photoelectric-Synergistic Neural Learning Rules and Reflex-Arc Behavior
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Flexible solid-electrolyte-gated-dielectric carbon nanotube thin film transistors and integrated circuits with the recorded radiation tolerance and reparability
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Inorganic–organic hybrid phototransistor array with enhanced photogating effect for dynamic near-infrared light sensing and image preprocessing
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Electric-double-layer transistors for synaptic devices and neuromorphic systems
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Printed, sub-2V ZnO electrolyte gated transistors and inverters on plastic
10.1002/adma.201300211 · doi-reference
Highly flexible vertical electrolyte-gated metal oxide transistors for neuromorphic electronics
10.1073/pnas.2606103123 · doi-reference
Ionic liquids for electrolyte-gating of ZnO field-effect transistors
10.1021/jp3024233 · doi-reference
High-density carrier accumulation in ZnO field-effect transistors gated by electric double layers of ionic liquids
10.1002/adfm.200801633 · doi-reference
Electrical impedance of spin-coatable ion gel films
10.1021/jp110166u · doi-reference
Sub-0.5 V highly stable aqueous salt gated metal oxide electronics
10.1038/srep13088 · doi-reference
Electrolyte-gated transistors for enhanced performance bioelectronics
10.1038/s43586-021-00065-8 · doi-reference
Dielectric materials for electrolyte gated transistor applications
10.1039/d1tc02271g · doi-reference
Electrolyte-gated transistors for organic and printed electronics
10.1002/adma.201202790 · doi-reference
Ultra-Flexible,“Invisible” Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends
10.1002/adma.201405400 · doi-reference
The development of flexible integrated circuits based on thin-film transistors
10.1038/s41928-017-0008-6 · doi-reference
Sub-3 V, MHz-class electrolyte-gated transistors and inverters
10.1021/acsami.2c01585 · doi-reference
Printable ion-gel gate dielectrics for low-voltage polymer thin-film transistors on plastic
10.1038/nmat2291 · doi-reference
Flexible complementary circuits operating at sub-0.5 V via hybrid organic–inorganic electrolyte-gated transistors
10.1073/pnas.2111790118 · doi-reference
Flexible and stretchable metal oxide nanofiber networks for multimodal and monolithically integrated wearable electronics
10.1038/s41467-020-16268-8 · doi-reference
An ultra-lightweight design for imperceptible plastic electronics
10.1038/nature12314 · doi-reference
Fully-printed high-performance organic thin-film transistors and circuitry on one-micron-thick polymer films
10.1038/ncomms5147 · doi-reference