Abstract
With the growing application demands of optoelectronic systems, high operating temperature (HOT) infrared detectors have become an inevitable development trend. Benefiting from superior material properties, mercury cadmium telluride (HgCdTe) has emerged as a key research candidate for HOT infrared detectors. This paper first introduces the application prospects of HOT HgCdTe infrared detectors, and analyzes the influence of various dark current components on device performance at elevated operating temperatures. Subsequently, it elaborates on the working mechanisms of different detector structures and their dark current suppression effects under high-temperature operation. The domestic and international research progress of HOT HgCdTe detectors is systematically reviewed, and the future development prospects of this research direction are presented. It is concluded that non-equilibrium operated HgCdTe detectors possess promising application potential in the field of high operating temperature infrared detection.