Abstract
Background: This study focuses on the fabrication and characterization of quasi-hemispherical Cd0.9Zn0.1Te (CZT) detector for gamma-ray spectroscopy applications, aiming to contribute to advancements in radiation measurement and research.Materials and Methods: A CZT ingot was grown using the vertical Bridgman technique, followed by proper fabrication processes including wafering, polishing, chemical etching, electrode deposition, and passivation. Response properties were evaluated under various external bias voltages using gamma-ray sources such as Co-57, Ba-133, and Cs-137.Results and Discussion: The fabricated quasi-hemispherical CZT detector demonstrated sufficient response properties across a wide range of gamma-ray energies, with sufficient energy resolution and peak distinguishability. Higher external bias voltages led to improved performance in terms of energy resolution and peak shape. However, further improvements in defect properties are necessary to enhance detector performance under low bias conditions.Conclusion: This study underscores the efficacy of quasi-hemispherical CZT detector for gamma- ray spectroscopy, providing valuable insights for enhancing their capabilities in radiation research field.