Abstract
Ti₃C₂Tₓ MXene was synthesised via an optimised low-temperature molten salt method using ammonium bifluoride. Complete MAX (Ti3AlC2) phase etching was achieved within 5 minutes at a temperature of 150 °C. Structural and compositional characterisation of Ti₃C₂Tₓ MXene confirmed well-exfoliated Ti3C2Tx sheets with com-plete Al removal. The synthesised Ti₃C₂Tₓ MXene was integrated as the active switch-ing layer in lateral and vertical memristor geometries. Both geometries exhibited non-linear bipolar resistive switching. The vertical device exhibited an on-state current of ~10 mA and stable resistance retention of over 120 minutes. UV-Ozone treatment of lateral devices resulted in the I-V characteristics changing from bipolar to asymmetric with rectifying characteristics. These results establish a broadly accessible, low-cost prototyping framework for Ti₃C₂Tₓ MXene -based memristor devices.