Abstract
Abstract
Controlled nonstoichiometric SiOₓ is critical for resistive switching and neuromorphic applications. We demonstrate a minimal process approach to fabricate CMOS compatible, stable resistive switches by direct oxygen implantation into silicon, enabling precise control over oxide stoichiometry, oxygen vacancies, interstitial oxygen, and silicon defects. Ag/SiOₓ/Si metal–insulator–semiconductor devices were formed by depositing Ag top electrodes after implantation. Cross-sectional transmission electron microscopy and energy-dispersive x-ray spectroscopy reveal ∼ 42 nm amorphous SiOₓ layer containing oxygen vacancies and interstitial oxygen, consistent with SDTrimSP simulations. Current–voltage (I–V) measurements reveal clear and stable semi-analog resistive switching over multiple switching cycles, with higher implantation fluence producing a larger memory window. The switching behavior is governed by an oxygen-vacancy–driven valence change mechanism, while conduction follows space-charge-limited transport. A gradual cycle-to-cycle increase in conductance is observed, originating from cumulative reorganization of implantation-induced defects and interstitial oxygen, demonstrating intrinsic analog plasticity suitable for neuromorphic devices.