Abstract
Abstract
This paper describes and investigates upgrading of the silicon doping facility at the ETRR-2 research reactor to accommodate larger size silicon ingots in the two positions available for irradiation in the thermal column of the reactor. Two methods of irradiation are proposed. Both are based on irradiating two ingots simultaneously in one position. After a certain irradiation time, the silicon ingots are reshuffled inside the irradiation channel. The results obtained show that the proposed irradiation strategies of doping silicon ingots are simple to handle and result in acceptable values of resistivity variation.