Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
10.1063/1.371866 · doi-reference
Demonstration of normally-off recess-gated AlGaN/GaN MOSFET using GaN cap layer as recess mask
10.1109/led.2014.2359986 · doi-reference
Study of blue InGaN/GaN light-emitting diodes with n-AlGaN layer as space layer and without the p-AlGaN electron blocking layer
10.1109/jdt.2014.2366201 · doi-reference
A review of GaN RF devices and power amplifiers for 5G communication applications
10.1016/j.fmre.2023.11.005 · doi-reference
A 1.8-kV normally-off Al-rich AlGaN channel HEMTs featuring a recessed gate and superlattice structure
10.1109/ted.2026.3708421 · doi-reference
A survey of gallium nitride HEMT for RF and high-power applications
10.1016/j.spmi.2017.05.042 · doi-reference
A Π-shaped p-GaN HEMT for reliable enhancement mode operation
10.1016/j.microrel.2022.114544 · doi-reference
AlN/GaN MIS-HEMT with GeN gate dielectric for mm-wave applications
10.1109/lmwt.2025.3553152 · doi-reference
A method to detect buffer traps by the hysteresis window of p-GaN HEMTs
10.1109/ted.2025.3629592 · doi-reference
Wide bandgap engineering in power transistors using GaN windows
10.1149/2162-8777/acbdbe · doi-reference
Performance enhancement of asymmetric gate graded-AlGaN/GaN HEMT on β-Ga2O3 substrate for RF applications
10.1016/j.mseb.2025.118514 · doi-reference
Performance enhancement of normally off InAlN/AlN/GaN HEMT using aluminium gallium nitride back barrier
10.1016/j.compeleceng.2022.107695 · doi-reference
The improvement of breakdown-voltage (>2000 V) in GaN based HFETs by using double polarization junctions
10.1016/j.rinp.2022.105508 · doi-reference
Modern 2D heterostructures: From fabrication challenges to emerging applications
10.1002/smtd.202502365 · doi-reference
Comprehensive review of GaN HEMTs: Architectures, recent developments, reliability concerns, challenges, and multifaceted applications
10.1016/j.prime.2025.101059 · doi-reference
High performance of AlGaN/GaN HEMT with AlN cap layer
10.1016/j.micrna.2024.208054 · doi-reference
Improvement of gate length dependence in electrical characteristics of AlGaN/GaN dual-gate HEMTs
10.1109/ted.2024.3430889 · doi-reference
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
10.1063/1.126940 · doi-reference
Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression
10.1088/1674-1056/24/6/067301 · doi-reference
Analytical model of interface trap impact on normally-off p-GaN HEMTs for precise performance prediction in high-power applications
10.1140/epjp/s13360-026-08222-2 · doi-reference
A comprehensive review of AlGaN/GaN high electron mobility transistors: Architectures and field plate techniques for high power/high frequency applications
10.1016/j.mejo.2023.105951 · doi-reference
