Abstract
The semiconductor nanoparticles have recently attracted a lot of attention due to the possibility of their application in various devices. In the present paper, nanoparticles of Zinc oxide are prepared by precipitation method using two different (EDTA and DNA) capping agents to control the agglomeration. XRD and SEM technique was used for structural characterization. For the study of dielectric properties, complex permittivity (ε′ and ε″) and loss tangent (tan δ) with frequency is analyzed with frequency and temperature. The Dispersion parameters are calculated using Cole-Cole analysis and the results are compared.
Open public full textRights: ALLOWED · cc-by · Source: journal-auto-sync:external:CROSSREF_ISSN