Abstract
The paper presents a design and simulation study of a differential active balun circuit implemented in a standard 90 nm complementary metal-oxide semiconductor (CMOS) process. The active balun design is intended for Worldwide Interoperability for Microwave Access (WiMAX) applications operating at frequency 5.8 GHz and with supply voltage of 1V. Measurements are taken for parameters such as gain difference, phase difference, and noise figure. The differential active balun design achieved gain difference of less than 0.23 dB, phase difference of 180° ± 3.4°, and noise figure of 9.78 dB, which are comparable to past active balun designs and researches. Lastly, the design achieved a low power consumption of 3.6 mW.