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Benjamin Asafo-Adjei, Ji Hyeon Lee, Albert Buer Buertey, Jea Woong Jo
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Fabrication of flexible resistive switching devices based on lead‐free all‐inorganic CsSnBr3 perovskite using a one‐step chemical vapor deposition method
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Lead-free all-inorganic cesium tin iodide perovskite for filamentary and interface-type resistive switching toward environment-friendly and temperature-tolerant nonvolatile memories
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