Plasma-field engineering for submicrometer boron-doped diamond with well-defined thickness, low roughness, and controlled boron incorporation

Effect of CH/C2 species density on surface morphology of diamond film grown by microwave plasma jet chemical vapor deposition

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Trimethylboron as single-source precursor for boron-carbon thin film synthesis by plasma chemical vapor deposition

10.1021/acs.jpcc.6b06529 · doi-reference

Gas phase chemistry of trimethylboron in thermal chemical vapor deposition

10.1021/acs.jpcc.7b09538 · doi-reference

Front and back side SIMS analysis of boron-doped delta-layer in diamond

10.1016/j.apsusc.2017.03.118 · doi-reference

Finite element and analytical solutions for van der Pauw and four-point probe correction factors when multiple non-ideal measurement conditions coexist

10.1063/1.5001830 · doi-reference

Analysis of the Fano in diamond

10.1016/s0925-9635(00)00378-2 · doi-reference

Formation of boron-carbon nanosheets and bilayers in boron-doped diamond: origin of metallicity and superconductivity

10.1186/s11671-015-1215-6 · doi-reference

Residual stresses and crystalline quality of heavily boron-doped diamond films analysed by micro-Raman spectroscopy and X-ray diffraction

10.1016/s0008-6223(03)00071-x · doi-reference

Effect of hydrogen flow rate on the plasma state and quality of diamond crystals grown by MPCVD

10.1016/j.mssp.2024.108884 · doi-reference

New insights into the mechanism of CVD diamond growth: single crystal diamond in MW PECVD reactors

10.1016/j.diamond.2008.03.022 · doi-reference

Effect of substrate holder design on stress and uniformity of large-area polycrystalline diamond films grown by microwave plasma-assisted CVD

10.3390/coatings10100939 · doi-reference

Microwave plasma modelling in clamshell chemical vapour deposition diamond reactors

10.1016/j.diamond.2022.108917 · doi-reference

Evolution of high-quality homoepitaxial CVD diamond films induced by methane concentration

10.3390/coatings11080888 · doi-reference

Single crystal diamond deposited by dual radio-frequency plasma jet CVD with high growth rate

10.3390/cryst9010032 · doi-reference

Effect of substrate stage height on single crystal diamond growth in MPCVD reactor: simulated and experimental perspective

10.1016/j.vacuum.2025.114723 · doi-reference

High quality MPACVD diamond single crystal growth: high microwave power density regime

10.1088/0022-3727/40/20/s04 · doi-reference

Engineering quantum-coherent defects: the role of substrate miscut in chemical vapor deposition diamond growth

10.1063/5.0029715 · doi-reference

Surface morphology and microstructure evolution of single crystal diamond during different homoepitaxial growth stages

10.3390/ma14205964 · doi-reference

Controlled boron content in lightly B-doped single crystal diamond films by variation of methane concentration

10.1016/j.carbon.2024.118923 · doi-reference

Nanometric diamond delta doping with boron

10.1002/pssr.201600329 · doi-reference

The influence of hydrogen plasma etching on the surface conductivity of the polycrystalline diamond surface and the temperature-dependent properties

10.1063/5.0153718 · doi-reference

Surface etching evolution of mechanically polished single crystal diamond with subsurface cleavage in microwave hydrogen plasma: topography, state and electrical properties

10.1016/j.vacuum.2022.110932 · doi-reference

Characterizations of etch pits formed on single crystal diamond surface using oxygen/hydrogen plasma surface treatment

10.1016/j.diamond.2015.08.012 · doi-reference

Detailed surface and gas-phase chemical kinetics of diamond deposition

10.1103/physrevb.43.1520 · doi-reference

Growth mechanism of vapor-deposited diamond

10.1557/jmr.1988.0133 · doi-reference

The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth - study of surface morphology

10.1016/j.diamond.2006.08.013 · doi-reference

Boron incorporation issues in diamond when TMB is used as precursor: toward extreme doping levels

10.1016/j.diamond.2011.12.019 · doi-reference

Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers

10.1016/j.carbon.2020.10.061 · doi-reference

Surface roughening of diamond (001) films during homoepitaxial growth in heavy boron doping

10.1016/j.diamond.2006.12.024 · doi-reference

A study on surface morphologies of (001) homoepitaxial diamond films

10.1016/s0925-9635(96)00698-x · doi-reference

Growth and surface structure of hydrogen terminal diamond thin films

10.7498/aps.73.20240053 · doi-reference

Fabrication of inversion channel diamond MOSFET with atomically step-free Al2O3/diamond interface

10.1016/j.carbon.2025.120024 · doi-reference

Effect of surface irregularities on diamond Schottky barrier diode with threading dislocations

10.1016/j.diamond.2022.109188 · doi-reference

Surface roughness at the Si(100)-SiO2 interface

10.1103/physrevb.32.8171 · doi-reference

Leakage current analysis of diamond Schottky barrier diode

10.1063/1.2643374 · doi-reference

Influence of different surface morphologies on the performance of high-voltage, low-resistance diamond schottky diodes

10.1109/ted.2020.2989733 · doi-reference

Fabrication of thin, luminescent, single-crystal diamond membranes

10.1063/1.3628463 · doi-reference

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

10.1038/srep31585 · doi-reference

Fabrication of thin single-crystal diamond membranes

10.1002/adma.200801460 · doi-reference

High crystalline quality single crystal chemical vapour deposition diamond

10.1088/0953-8984/21/36/364205 · doi-reference