Abstract
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Qingshan Yang, Yuheng Ma, Song Yang, Bowen Zheng, Haoran Chu
Abstract
Authors
Institutions
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Susceptor coating materials applicable for silicon carbide reactor cleaning
10.4028/www.scientific.net/msf.897.99 · doi-reference
Plasmaless etching of silicon using chlorine trifluoride
10.1116/1.585682 · doi-reference
Über das Chlortrifluorid
10.1002/zaac.19301900127 · doi-reference
The use of chlorine trifluoride as a fluorinating agent
10.1021/ja01126a526 · doi-reference
Electrolytic fluorine production in Germany
10.1149/1.3071789 · doi-reference
Interhalogen compounds and their use as fluorinating agents
10.1002/zfch.19670070202 · doi-reference
10.1109/memsys.2007.4433014
10.1109/memsys.2007.4433014 · doi-reference
Selective etching of silicon nitride over silicon oxide using chlorine trifluoride/hydrogen remote plasma
10.1038/s41598-022-09252-3 · doi-reference
Etching of silicon carbide using chlorine trifluoride gas
10.1143/jjap.44.1376 · doi-reference
Separation of a gas mixture containing uranium hexafluoride, hydrogen fluoride, and chlorine trifluoride
10.1007/s10512-023-01012-4 · doi-reference
Halogenation in the liquid phase by means of chlorine trifluoride
10.1039/jr9500003608 · doi-reference
Evidence for chlorine oxyfluoride as a primary product of the reaction of chlorine trifluoride with water
10.1016/0022-1902(72)80254-9 · doi-reference
Halogen fluorides and other covalent fluorides—physical and chemical properties
10.1021/cr50023a003 · doi-reference
Density functional theory study on the fluorination reactions of silicon and silicon dioxide surfaces using different fluorine-containing species
10.1116/1.5081490 · doi-reference