Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs)

Arobinda Pal; Angsuman Sarkar

doi:10.1016/j.jestch.2014.06.002

Enriched recordOpen access

Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs)

Arobinda Pal, Angsuman Sarkar

Engineering Science and Technology, an International Journal2014doi:10.1016/j.jestch.2014.06.002

Citation graph

Abstract

In this paper, a 2D analytical model for the Dual Material Surrounding Gate MOSFET (DMSG) by solving the Poisson equation has been proposed and verified using ATLAS TCAD device simulator. Analytical modeling of parameters like threshold voltage, surface potential and Electric field distribution is developed using parabolic approximation method. A comparative study of the SCEs for DMSG and SMSG device structures of same dimensions has been carried out. Result reveals that DMSG MOSFET provides higher efficacy to prevent short-channel effects (SCEs) as compared to a conventional SMSG MOSFET due to the presence of the perceivable step in the surface potential profile which effectively screen the drain potential variation in the source side of the channel. A nice agreement between the results obtained from the model and the results obtained from numerical TCAD device simulator provides the validity and correctness of the developed model.

Open public full text

Rights: UNKNOWN · cc-by-nc-nd · Source: journal-auto-sync:external:CROSSREF_ISSN

Authors

Arobinda Pal#1 Angsuman Sarkar#2

Institutions

No ROR-resolved institution is linked to this work yet.

Provenance

crossref

Confidence 100%

unpaywall

Confidence 95%

doaj

Confidence 92%

datacite

Confidence 0%

Referenced works

View all references →

No local reference links have been materialized yet.

Cited by

View all cited-by records →

No local citing links have been materialized yet.

External reference records

Unresolved referenced work

2009

A novel hetero-material gate (HMG) MOSFET for deep-submicron ULSI technology

10.1109/16.735743 · 1998

Dual material gate (DMG) field effect transistor

10.1109/16.760391 · 1999

Effect of gate engineering in double-gate MOSFETs for analog/RF applications

10.1016/j.mejo.2012.06.002 · 2012

A new symmetrical double gate nanoscale MOSFET with asymmetrical side gates for electrically induced source/drain

10.1016/j.mee.2005.11.002 · 2006

Sub-threshold behavior of triple-gate MOSFETs on SOI material sub-threshold behavior of triple-gate MOSFETs on SOI material

10.1016/j.sse.2003.09.027 · 2004

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

2000

A unified short-channel compact model for cylindrical surrounding-gate MOSFET

10.1016/j.sse.2010.11.008 · 2011

Ultimate thin double-gate SOI MOSFETs

10.1109/ted.2003.811371 · 2003

High-performance top and bottom double-gate low temperature poly-silicon thin film transistors fabricated by excimer laser crystallization

10.1016/j.sse.2007.10.029 · 2008

A new dual-material double-gate (DMDG) nanoscale SOI MOSFET—Two-dimensional analytical modeling and simulation

Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs)

Referenced works

Cited by

External reference records

Additional external references