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Privacy-aware community infrastructureJincan Zhang, Quan Zhu, Kexin Wang, Weiyi Zhao, Min Liu
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GaN high electron mobility transistors for sub-millimeter wave applications
10.7567/jjap.53.100212 · 2014
Mobility limitations in Single- and double-heterostructure GaN HEMTs
10.1109/ted.2023.3311770 · 2023
Ultrawide-bandgap semiconductors for high-frequency devices
10.1109/mmm.2024.3428193 · 2024
Comprehensive analysis and investigation of GaN LNA for 3–4 GHz using different gate-drain spacing
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Beyond the bandwidth limit: a tutorial on low-noise amplifier circuits for advanced systems based on III–V process
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GaN HEMT noise modeling based on 50‐Ω noise factor
10.1002/mop.28983 · 2015
Intrinsic noise equivalent-circuit parameters for AlGaN/GaN HEMTs
10.1109/tmtt.2003.810140 · 2003
Analytical Modeling of High-Frequency Noise Including Temperature Effects in GaN HEMTs on High-Resistivity Si Substrates
10.1109/ted.2010.2047897 · 2010
A unified drain current 1/f noise model for GaN-based high electron mobility transistors
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Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT
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Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT
10.1016/j.spmi.2017.09.045 · 2017
An improved noise modeling method using a quasi-physical zone division model for AlGaN/GaN HEMTs
10.1109/ted.2023.3249136 · 2023
Physics‐based compact models of GaN HEMTs for high power RF applications: a review (Invited Paper)
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Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model
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Computational modelling of cylindrical-ferroelectric-dual metal-nanowire field effect transistor (C-FE-DM-NW FET) using landau equation for gate leakage minimization
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Behavioral-level modeling of GaN HEMT small-signal intrinsic noise based on DE-SVR algorithm
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Optimized machine learning-augmented hybrid empirical models for AlGaN/GaN HEMTs: a comprehensive analysis
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Intrinsic noise behavioral modeling of GaN HEMTs under small-signal conditions using WOA-HKELM
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Hybridization of the swarming and interior point algorithms to solve the Rabinovich–Fabrikant system
10.1038/s41598-023-37466-6 · 2023
A novel ANN-PSO method for optimizing a small-signal equivalent model of a dual-field-plate GaN HEMT
10.3390/mi15121437 · 2024
A hybrid GaN HEMT model merging artificial neural networks and ASM-HEMT for parameter precision and scalability
10.1109/ted.2024.3478181 · 2024
On efficient modeling of drain current for designing high-power GaN HEMT-based circuits
10.1007/s10825-024-02225-x · 2024
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10.1108/imds-07-2019-0361 · 2019
A comparative analysis of L1, L2, and L1L2 regularization techniques in neural networks for image classification
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A practical bayesian framework for backpropagation networks
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Machine learning facilitated business intelligence (Part I): neural networks learning algorithms and applications
10.1108/imds-07-2019-0361 · doi-reference
On efficient modeling of drain current for designing high-power GaN HEMT-based circuits
10.1007/s10825-024-02225-x · doi-reference
A hybrid GaN HEMT model merging artificial neural networks and ASM-HEMT for parameter precision and scalability
10.1109/ted.2024.3478181 · doi-reference
A novel ANN-PSO method for optimizing a small-signal equivalent model of a dual-field-plate GaN HEMT
10.3390/mi15121437 · doi-reference
Hybridization of the swarming and interior point algorithms to solve the Rabinovich–Fabrikant system
10.1038/s41598-023-37466-6 · doi-reference
FMNSICS: fractional Meyer neuro-swarm intelligent computing solver for nonlinear fractional Lane–Emden systems
10.1007/s00521-021-06452-2 · doi-reference
A neuro swarm procedure to solve the novel second order perturbed delay Lane-Emden model arising in astrophysics
10.1038/s41598-022-26566-4 · doi-reference
Intrinsic noise behavioral modeling of GaN HEMTs under small-signal conditions using WOA-HKELM
10.1007/s10825-025-02488-y · doi-reference
Optimized machine learning-augmented hybrid empirical models for AlGaN/GaN HEMTs: a comprehensive analysis
10.1109/access.2025.3594339 · doi-reference
Numerical simulation of hetero dielectric trench gate JAM gate-all-around FET (HDTG-JAM-GAAFET) for label free biosensing applications
10.1149/2162-8777/ad161f · doi-reference
A practical bayesian framework for backpropagation networks
10.1162/neco.1992.4.3.448 · doi-reference
Hetero-dielectric macaroni channel cylindrical gate all around field effect transistor (HD-MC CGAA FET) for reduced gate leakage analog applications
10.1007/s00542-023-05577-9 · doi-reference
Computational modelling of cylindrical-ferroelectric-dual metal-nanowire field effect transistor (C-FE-DM-NW FET) using landau equation for gate leakage minimization
10.1016/j.micrna.2024.207851 · doi-reference
Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model
10.1088/1361-6641/acb0f3 · doi-reference
Physics‐based compact models of GaN HEMTs for high power RF applications: a review (Invited Paper)
10.1002/jnm.3276 · doi-reference
An improved noise modeling method using a quasi-physical zone division model for AlGaN/GaN HEMTs
10.1109/ted.2023.3249136 · doi-reference
Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT
10.1016/j.spmi.2017.09.045 · doi-reference
Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT
10.1063/5.0156798 · doi-reference
Analytical Modeling of High-Frequency Noise Including Temperature Effects in GaN HEMTs on High-Resistivity Si Substrates
10.1109/ted.2010.2047897 · doi-reference
Intrinsic noise equivalent-circuit parameters for AlGaN/GaN HEMTs
10.1109/tmtt.2003.810140 · doi-reference
GaN HEMT noise modeling based on 50‐Ω noise factor
10.1002/mop.28983 · doi-reference
Comprehensive analysis and investigation of GaN LNA for 3–4 GHz using different gate-drain spacing
10.1016/j.mee.2025.112361 · doi-reference
Ultrawide-bandgap semiconductors for high-frequency devices
10.1109/mmm.2024.3428193 · doi-reference
Mobility limitations in Single- and double-heterostructure GaN HEMTs
10.1109/ted.2023.3311770 · doi-reference
GaN high electron mobility transistors for sub-millimeter wave applications
10.7567/jjap.53.100212 · doi-reference