Development of boron-doped poly-SiCx for TOPCon solar cells

A parameterization of light trapping in wafer-based solar cells

10.1109/jphotov.2015.2465175 · doi-reference

Local p+poly‐si passivating contacts realized by direct FlexTrail printing of boron ink and selective alkaline etching for high efficiency TOPCon based solar cells

10.1002/pip.3901 · doi-reference

Molecular models and activation energies for bonding rearrangement in plasma-deposited a − SiNx : H dielectric thin films treated by rapid thermal annealing

10.1103/physrevb.63.245320 · doi-reference

Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon

10.1063/1.3120765 · doi-reference

Thermal activation of hydrogen for defect passivation in poly-Si based passivating contacts

10.1016/j.solmat.2021.111267 · doi-reference

Phosphorus-diffused polysilicon contacts for solar cells

10.1016/j.solmat.2015.06.001 · doi-reference

Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

10.1016/j.solmat.2016.06.040 · doi-reference

Review on hydrogen in silicon solar cells: from its origin to its detrimental effects

10.1016/j.solmat.2025.113432 · doi-reference

Crystalline silicon solar cells with coannealed Electron- and hole-selective SiCx passivating contacts

10.1109/jphotov.2018.2866189 · doi-reference

Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon

10.1016/0022-0248(95)00397-5 · doi-reference

Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD

10.1016/j.jmrt.2019.09.026 · doi-reference

Spectroscopic review of hydrogenated, carbonated and oxygenated group IV alloys

10.1016/j.vibspec.2022.103387 · doi-reference

Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon

10.1103/physrevb.45.13367 · doi-reference

Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution

10.1063/1.363541 · doi-reference

Calibration of the WCT‐100 photoconductance instrument at low conductance

10.1002/pip.810 · doi-reference

Simulation of TOPCoRE solar cells: impact of boron doping parameters of P+ layer localized under front side metal contacts on cell performance

10.1007/s12633-026-03717-0 · doi-reference

The concept of skins for silicon solar cell modeling

10.1016/j.solmat.2017.05.012 · doi-reference

Hydrogen thermal activation of defects enabling firing stable Poly-Si based passivating contacts for TOPCon solar cells

10.1016/j.solener.2024.112838 · doi-reference

Compositional analysis of (p) a-SiCx:H emitter layers for enhanced short-circuit current density in SHJ solar cells

10.1016/j.mssp.2026.110912 · doi-reference

Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films

10.1016/j.solmat.2017.06.039 · doi-reference

Achieving excellent surface passivation with J0,s less than 0.5 fA cm−2 utilizing a carbon‐incorporated intrinsic polysilicon‐based tunnel oxide passivating contact structure

10.1002/smtd.202500380 · doi-reference

Novel polysilicon in resisting thermal-evaporation Al-electrode damage and its application in back-junction passivated contact p-type solar cells

10.1088/1361-6528/acec53 · doi-reference

Blistering-free carbon-doped polysilicon (n+) passivating contact with high surface passivation properties prepared by industrial tube PECVD

10.1016/j.mssp.2023.107969 · doi-reference

Optical losses in silicon heterojunction solar cells: analysis of record-efficiency devices and practical limits based on ray-tracing simulations

10.1039/d5el00001g · doi-reference

Enhanced passivation of boron‐doped polysilicon passivated contacts with a single‐sided J0 of 2.8 fA/cm2 by dual‐layer silicon oxide structure

10.1002/smll.73603 · doi-reference

Suppression of film blistering in silicon nano-crystals/silicon oxide composite layer by insertion of intrinsic hydrogenated amorphous silicon layer

10.35848/1347-4065/adc00e · doi-reference

Highly improved passivation of PECVD p-type TOPCon by suppressing plasma-oxidation ion-bombardment-induced damages

10.1016/j.solener.2022.07.003 · doi-reference

Highly passivating and blister-free hole selective poly-silicon based contact for large area crystalline silicon solar cells

10.1016/j.solmat.2019.109912 · doi-reference

Current status and challenges for hole-selective poly-silicon based passivating contacts

10.1063/5.0185379 · doi-reference

Silicon-rich silicon carbide hole-selective rear contacts for crystalline-silicon-based solar cells

10.1021/acsami.6b12714 · doi-reference

Silicon solar cells with passivating contacts: classification and performance

10.1002/pip.3574 · doi-reference

Comparison of firing stability between p‐ and n‐type polysilicon passivating contacts

10.1002/pip.3544 · doi-reference

Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

10.1063/1.1517723 · doi-reference

Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics

10.1016/j.solmat.2013.09.017 · doi-reference

A study on the charge carrier transport of passivating contacts

10.1109/jphotov.2018.2870735 · doi-reference