Abstract
Peilin He, Ai Wang, Tai Li, Xingwei Yang
Abstract
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2024
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Three-dimensional numerical analyses of the effects of a cusp magnetic field on the flows, oxygen transport and heat transfer in a Czochralski silicon melt
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Effects of crystal-crucible iso-rotation and a balanced/unbalanced cusp magnetic field on the heat, flow, and oxygen transport in a Czochralski silicon melt
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Intrinsic point defects and impurities in silicon crystal growth
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Numerical investigation of coupled effects of rotational speed difference and growth rate on VOx defect behavior in Czochralski silicon
10.1002/crat.70040 · doi-reference
Argon-induced thermal field optimization and oxygen volatilization for vacancy-oxygen defect control in CZ silicon growth
10.1016/j.applthermaleng.2025.128610 · doi-reference
Analysis of the effect of symmetric/asymmetric CUSP magnetic fields on melt/crystal interface during Czochralski silicon growth
10.1016/j.jcrysgro.2015.12.001 · doi-reference
Grown-in precipitates in heavily phosphorus-doped Czochralski silicon
10.1063/1.3682112 · doi-reference
Oxygen precipitation in lightly and heavily doped Czochralski silicon
10.1149/1.2355747 · doi-reference
Crystal growth and oxygen precipitation behavior of 300mm nitrogen-doped Czochralski silicon
10.1016/j.jcrysgro.2006.04.015 · doi-reference
Numerical and experimental investigation of oxygen transport in 300 mm Czochralski silicon crystal growth with transverse magnetic fields
10.1016/j.vacuum.2024.113994 · doi-reference
Growth of 300 mm n-type recharged Czochralski silicon crystal with low oxygen content by dual side-heaters
10.1016/j.solmat.2025.113802 · doi-reference
Defect engineering in Czochralski silicon by electron irradiation at different temperatures
10.1016/s0168-583x(01)00871-0 · doi-reference
New oxygen infrared bands in annealed irradiated silicon
10.1103/physrev.135.a1381 · doi-reference
Study on effect of impurity concentration and thermal stress on vacancy-oxygen complexes in n-type G12 single crystal silicon by Czochralski method
10.1016/j.mssp.2025.109419 · doi-reference
Oxygen-related micro-defects in Czochralski silicon annealed at enhanced stress conditions
10.1016/s1466-6049(01)00125-8 · doi-reference
Impact of phosphorus diffusion pre-gettering on the electrical properties of oxygen precipitates in n-type Czochralski silicon for heterojunction solar cells
10.1016/j.solmat.2025.113739 · doi-reference
The effect of oxide precipitates on minority carrier lifetime in n -type silicon
10.1063/1.4936852 · doi-reference
Minority carrier lifetime in silicon photovoltaics: the effect of oxygen precipitation
10.1016/j.solmat.2013.06.018 · doi-reference
The effect of oxide precipitates on minority carrier lifetime in p-type silicon
10.1063/1.3632067 · doi-reference
Study of the conversion of the VO to the VO2 defect in silicon heat-treated under uniform stress conditions
10.1063/1.1430529 · doi-reference
Oxide micro‐precipitates in as‐grown CZ silicon
10.1149/1.2123679 · doi-reference
Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon
10.1103/physrevb.75.155202 · doi-reference
Defect engineering of Czochralski single-crystal silicon
10.1016/s0927-796x(00)00015-2 · doi-reference
Oxygen diffusion and precipitation in Czochralski silicon
10.1088/0953-8984/12/25/201 · doi-reference
Study of flow pattern defects and oxidation induced stacking faults in czochralski single-crystal silicon growth
10.3390/cryst13020336 · doi-reference
Warpage of Czochralski-Grown silicon wafers as affected by oxygen precipitation
10.1143/jjap.24.815 · doi-reference
300mm Czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitation
10.1016/j.physb.2011.08.055 · doi-reference
Spatial lifecycles of cleantech industries – the global development history of solar photovoltaics
10.1016/j.enpol.2016.10.034 · doi-reference
Crystal surface heat transfer during the growth of 300mm monocrystalline silicon by the Czochralski process
10.1016/j.ijheatmasstransfer.2024.126259 · doi-reference
Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%
10.1038/nenergy.2017.32 · doi-reference