Abstract
Shing-Dar Wang, Chun-Hway Hsueh
Abstract
Authors
Institutions
No ROR-resolved institution is linked to this work yet.
Provenance
crossref
Confidence 100%
unpaywall
Confidence 95%
datacite
Confidence 0%
No local reference links have been materialized yet.
No local citing links have been materialized yet.
Unresolved referenced work
Kept as external metadata until matched
Screw dislocations in and near lamellar inclusions
10.1002/pssb.19660170206 · 1966
10.1520/stp34243s
10.1520/stp34243s
One dimensional dislocations: I. Static theory
10.1098/rspa.1949.0095 · 1949
The driving force for glide of a threading dislocation in a strained epitaxial layer on a substrate
10.1016/0022-5096(90)90027-2 · 1990
The mechanics of dislocations in strained-layer semiconductor materials
10.1016/s0065-2156(08)70173-x · 1993
A critical thickness condition for a strained complaint substrate/epitaxial film system
10.1063/1.117362 · 1996
The energy of an array of dislocations in an anisotropic half-space
10.1080/01418619408242211 · 1994
Screw dislocations in a thin-phase heteroepitaxial plate
10.1002/pssa.2211290109 · 1992
Defects in epitaxial multilayers
1974
Steady state cracking in brittle substrates beneath adherent films
10.1016/0020-7683(89)90096-6 · 1989
Interface crack between two elastic layers
10.1007/bf00018123 · 1990
The energy of an array of dislocations: implications for strain relaxation in semiconductor heterostructures
10.1080/01418619008244339 · 1990
The energy of an array of dislocations: II. Consideration of a capped epitaxial layer
10.1080/01418619108204865 · 1991
Effect of elastic constants on the critical thickness of an epilayer
10.1002/pssa.2211520210 · 1995
Isotropic and anisotropic elasticity studies of mismatch dislocations, critical thickness and work hardening in epilayers
10.4028/www.scientific.net/ddf.136-137.61 · 1996
Criteria for formation of interface dislocations in a finite thickness epilayer deposited on a substrate
10.1063/1.370558 · 1999
No additional external references are available.