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Janet L. Pan, Clifton G. Fonstad
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10.1117/12.154854
10.1117/12.154854
Unresolved referenced work
Kept as external metadata until matched
Unresolved referenced work
Kept as external metadata until matched
Proposal of the detectivity d** for detectors limited by radiation noise
10.1364/josa.50.001058 · 1960
Noise in radiation detectors
10.1109/jrproc.1959.287042 · 1959
Quantum well infrared photodetectors
10.1063/1.354252 · 1993
Performance of generation III 640×480 ptsi MOS array
10.1117/12.179685 · 1994
15 μm 128×128 GaAs/AlGaAs quantum well infrared photodetector focal plane array camera
10.1109/16.554790 · 1997
Long-wavelength 256×256 GaAs/AlGaAs quantum well infrared photodetector (QWIP) palm-size camera
10.1109/16.822276 · 2000
10.1117/12.271178
10.1117/12.271178
10.1117/12.271169
10.1117/12.271169
QWIPs: a serious alternative to HgCdTe for long-wavelength infrared imaging
1998
A two stack indirect barrier/triple coupled quantum well infrared detector for mid-wavelength and long wavelength infrared dual band detection
10.1063/1.120386 · 1997
Two color infrared photodetector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells
10.1063/1.109009 · 1993
10.1109/leos.1992.694111
10.1109/leos.1992.694111
Unresolved referenced work
1997
A new infrared detector using electron emission from multiple quantum wells
10.1116/1.582560 · 1993
New mode of IR detection using quantum wells
10.1063/1.95343 · 1984
Application of internal photoemission from quantum well and heterojunction superlattices to infrared photodetectors
10.1016/0020-0891(83)90018-0 · 1993
Internal photoemission form quantum well heterojunction superlattices by phononless free carrier absorption
10.1063/1.94345 · 1983
First observation of an extremely large dipole infrared transition within the conduction band of a GaAs quantum well
10.1063/1.95742 · 1985
10.1063/1.97928
10.1063/1.97928 · 1987
10.1007/978-1-4615-3346-7_5
10.1007/978-1-4615-3346-7_5
Unresolved referenced work
Kept as external metadata until matched
Unresolved referenced work
Kept as external metadata until matched
Unresolved referenced work
Kept as external metadata until matched
Unresolved referenced work
Kept as external metadata until matched
Glancing incidence X-ray characterization of materials
1993
10.1016/s0022-0248(00)00625-4
10.1016/s0022-0248(00)00625-4
Interface roughness and period variations in mqw structures determined by X-ray diffraction
10.1107/s0021889888006569 · 1988
X-ray diffraction from multiple quantum well structures
1986
10.1007/978-3-642-79678-4_6
10.1007/978-3-642-79678-4_6
X-ray refractive index: a tool to determine the average composition in multilayer structures
10.1063/1.96749 · 1986
Investigation of interfacial roughness of InxGa1−xAs epitaxial layers on GaAs and InP substrates by soft X-ray reflectivity
10.1063/1.347338 · 1991
10.1002/pssa.2210510227
10.1002/pssa.2210510227 · 1979
Determining period variations in a distributed Bragg reflector through high resolution X-ray analysis
10.1016/0022-0248(94)00863-9 · 1995
10.1007/978-3-642-97098-6
10.1007/978-3-642-97098-6
Precise computer control of the mbe process-application to graded InGaAlAs/InP alloys
10.1016/0022-0248(91)90946-3 · 1991
Optical absorption at a heterojunction
1988
Intraband photoconductivity of quantum well heterostructures
1986
Space-charge limited current and capacitance in double junction diodes
10.1063/1.338165 · doi-reference
10.1063/1.354115
10.1063/1.354115 · doi-reference
GaAs/AlGaAs quantum well infrared photoconductors versus hgcdte photodiodes for long wavelength infrared applications
10.1117/12.165819 · doi-reference
10.1117/12.271211
10.1117/12.271211 · doi-reference
Enhanced quantum well infrared photodetector with novel multiple quantum well grating structure
10.1063/1.116344 · doi-reference
Photocapacitance spectroscopy of GaAs/AlGaAs multiquantum wells
10.1063/1.102186 · doi-reference
Physical model of depletion and accumulation in quantum well infrared photodetectors
10.1109/3.798091 · doi-reference
10.1063/1.349602
10.1063/1.349602 · doi-reference
10.1063/1.354789
10.1063/1.354789 · doi-reference
Injection mechanism at contacts in a quantum well intersubband infrared detector
10.1063/1.107887 · doi-reference
A self consistent model for quantum well infrared photodetectors
10.1063/1.362712 · doi-reference
10.1117/12.271210
10.1117/12.271210 · doi-reference
Contact and distributed effects in quantum well infrared photodetectors
10.1063/1.114862 · doi-reference
10.1007/978-94-011-1144-7_5
10.1007/978-94-011-1144-7_5 · doi-reference
High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors
10.1063/1.102682 · doi-reference
Emission and capture of electrons in multiquantum well structures
10.1109/3.362722 · doi-reference
Direct determination of the electron tunneling escape time from a GaAs/AlxGa1−xAs quantum well by transient-capacitance spectroscopy
10.1103/physrevb.44.3157 · doi-reference
Excess tunnel currents in AlGaAs/GaAs multiple quantum well infrared detectors
10.1063/1.107331 · doi-reference
Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP
10.1063/1.100878 · doi-reference
Admittance spectroscopy measurement of band offset in GaAs-GaAlAs multiquantum well
10.1063/1.347102 · doi-reference
Analysis of the dark current in doped well multiple quantum well AlGaAs infrared photodetectors
10.1063/1.343630 · doi-reference
Quantum interference effects and electric field domain formation in quantum well infrared photodetectors
10.1063/1.113739 · doi-reference
Control of electric field domain formation in multiquantum well structures
10.1063/1.109793 · doi-reference
Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivity
10.1063/1.97706 · doi-reference
Photoexcited coherent tunneling in a double-barrier superlattice
10.1103/physrevlett.59.2459 · doi-reference
Photoconductive gain mechanism of quantum well intersubband infrared detectors
10.1063/1.107286 · doi-reference
Normal incidence photoresponse in GaAs/AlGaAs quantum-well infrared photodetector
10.1063/1.114698 · doi-reference
Normal incident InGaAs/GaAs multiple quantum well infrared detector using electron intersubband transitions
10.1063/1.115144 · doi-reference
10.1109/drc.1995.496296
10.1109/drc.1995.496296 · doi-reference
Electron intersubband normal incidence absorption in InGaAs/GaAs quantum wells
10.1116/1.586740 · doi-reference
Cyclotron resonance experiments in uniaxially stressed silicon: valence band inverse mass parameters and deformation potentials
10.1103/physrev.129.1041 · doi-reference
Electronic structure of superlattices and quantum wells under uniaxial stress
10.1103/physrevb.36.6591 · doi-reference
Effect of deformation on the conduction band of III–V semiconductors
10.1103/physrevb.16.3688 · doi-reference
Hole subbands in strained GaAs-Ga1−xAlxAs quantum wells: exact solution of the effective-mass equation
10.1103/physrevb.36.5887 · doi-reference
Hole subbands in strained quantum-well semiconductors in [h h k] directions
10.1103/physrevb.52.11132 · doi-reference
Valence band engineering in strained-layer structures
10.1088/0268-1242/4/3/001 · doi-reference
Quantum well intersubband transition physics and devices
10.1063/1.351015 · doi-reference
Infrared absorption enhancement in light and heavy hole inverted Ga1−xInxAs/Al1−yInyAs quantum wells
10.1063/1.105645 · doi-reference
Novel differentially strained p-doped quantum well infrared detector
10.1016/0020-0891(93)90004-q · doi-reference
A metal grating coupled bound-to-miniband transition GaAs multiquantum well/superlattice infrared detector
10.1063/1.105491 · doi-reference