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H. Morkoç
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10.1007/978-3-642-58562-3
10.1007/978-3-642-58562-3
Progress and prospects of Group III–V nitride semiconductors
10.1016/s0079-6727(96)00002-x · 1996
Emerging GaN-based devices
10.1109/5.469300 · 1995
A review of large bandgap SiC, III–V nitrides, and ZnSe-based II–VI semiconductor structures and devices
10.1063/1.358463 · 1994
GaN, AlN, and InN: a review
10.1116/1.585897 · 1992
Growth and applications of Group III-nitrides
10.1088/0022-3727/31/20/001 · 1998
GaN: processing, defects, and devices
10.1063/1.371145 · 1999
Epitaxial growth and piezoelectric properties of AlN, GaN, and GaAs on sapphire or spinel
10.1007/bf02666163 · 1973
Semiconductor ultraviolet detectors
10.1063/1.362677 · 1996
Ultraviolet photodetectors based on GaN p–I–n and AlGaN(p)–GaN(i)–GaN(n) structures
10.1063/1.119366 · 1997
AlN–GaN quarter-wave reflector stack grown by gas-source MBE on (1 0 0) GaAs
10.1049/el:19950020 · 1995
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue light-emitting diodes
10.1063/1.111832 · 1994
High luminosity gallium nitride blue and blue-green light emitting diodes
1995
10.1007/978-3-642-58562-3_11
10.1007/978-3-642-58562-3_11
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices
1997
Wurtzite GaN-based heterostructures by molecular beam epitaxy
10.1109/2944.704115 · 1998
Unresolved referenced work
Kept as external metadata until matched
Unresolved referenced work
Kept as external metadata until matched
Unresolved referenced work
Kept as external metadata until matched
Unresolved referenced work
Kept as external metadata until matched
Exact electron momentum-relaxation times in GaN associated with scattering by polar-optical phonons
10.1063/1.368584 · 1998
Monte Carlo calculation of velocity-field characteristics of wurtzite GaN
10.1063/1.365963 · 1997
10.1063/1.360405
10.1063/1.360405 · 1995
10.1016/s0080-8784(08)62850-1
10.1016/s0080-8784(08)62850-1
High power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
10.1109/55.753753 · 1999
High Al-content AlGaN/GaN MODFETs for ultrahigh performance
10.1109/55.658600 · 1998
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
10.1109/55.658603 · 1998
High-power 10 GHz operation of AlGaN HFETs on insulating SiC
10.1109/55.678543 · 1998
AlGaN/GaN HEMTs grown on SiC substrates
10.1049/el:19970122 · 1997
Unresolved referenced work
Kept as external metadata until matched
Microwave performance of a quarter micron gate low noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
10.1109/edl.1986.26507 · 1986
Growth of gallium nitride by hydride vapor-phase epitaxy
10.1016/s0022-0248(97)00075-4 · 1997
Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxym
10.1063/1.370571 · 1999
10.1103/physrevlett.79.2273
10.1103/physrevlett.79.2273 · 1997
10.1063/1.350529
10.1063/1.350529 · 1992
10.1063/1.109026
10.1063/1.109026 · 1993
10.1063/1.122012
10.1063/1.122012 · 1998
10.1103/physrevlett.82.1237
10.1103/physrevlett.82.1237 · 1999
10.1063/1.366585
10.1063/1.366585 · 1998
10.1063/1.121274
10.1063/1.121274 · 1998
10.1016/0022-3697(73)90092-9
10.1016/0022-3697(73)90092-9 · doi-reference
10.1063/1.1289072
10.1063/1.1289072 · doi-reference
Some aspects of thermal conductivity of isotopically pure diamond — a comparison with nitrides
10.1016/s0925-9635(97)00336-1 · doi-reference
10.1016/0022-3697(77)90112-3
10.1016/0022-3697(77)90112-3 · doi-reference
10.1063/1.1308057
10.1063/1.1308057 · doi-reference
10.1103/physrevb.61.r7846
10.1103/physrevb.61.r7846 · doi-reference
10.1016/s0080-8784(08)62713-1
10.1016/s0080-8784(08)62713-1 · doi-reference
10.1103/physrevlett.75.4452
10.1103/physrevlett.75.4452 · doi-reference
10.1063/1.116027
10.1063/1.116027 · doi-reference
10.1063/1.125922
10.1063/1.125922 · doi-reference
10.1103/physrevb.58.1367
10.1103/physrevb.58.1367 · doi-reference
10.1557/proc-449-519
10.1557/proc-449-519 · doi-reference
10.1016/s0022-0248(98)00193-6
10.1016/s0022-0248(98)00193-6 · doi-reference
10.1063/1.373529
10.1063/1.373529 · doi-reference
10.1063/1.118924
10.1063/1.118924 · doi-reference
10.1103/physrevlett.61.1748
10.1103/physrevlett.61.1748 · doi-reference
10.1016/s0921-4526(99)00406-8
10.1016/s0921-4526(99)00406-8 · doi-reference
10.1103/physrevb.59.12479
10.1103/physrevb.59.12479 · doi-reference
10.1063/1.115098
10.1063/1.115098 · doi-reference
Impurity contamination of GaN epitaxial films from sapphire, SiC, and ZnO substrates
10.1063/1.120343 · doi-reference
10.1063/1.125041
10.1063/1.125041 · doi-reference
10.1557/proc-449-853
10.1557/proc-449-853 · doi-reference
10.1103/physrevb.58.1550
10.1103/physrevb.58.1550 · doi-reference
10.1063/1.121966
10.1063/1.121966 · doi-reference
10.1063/1.334382
10.1063/1.334382 · doi-reference
10.1088/0022-3727/14/12/016
10.1088/0022-3727/14/12/016 · doi-reference
10.1063/1.117729
10.1063/1.117729 · doi-reference
10.1016/s0038-1101(99)00227-0
10.1016/s0038-1101(99)00227-0 · doi-reference
10.1063/1.331667
10.1063/1.331667 · doi-reference
10.1063/1.122735
10.1063/1.122735 · doi-reference
10.1063/1.125622
10.1063/1.125622 · doi-reference
10.1063/1.123180
10.1063/1.123180 · doi-reference
10.1063/1.116080
10.1063/1.116080 · doi-reference
10.1063/1.115028
10.1063/1.115028 · doi-reference
10.1557/proc-395-443
10.1557/proc-395-443 · doi-reference
10.1063/1.122579
10.1063/1.122579 · doi-reference
10.1143/jjap.37.l398
10.1143/jjap.37.l398 · doi-reference
10.1063/1.121268
10.1063/1.121268 · doi-reference
10.1063/1.123791
10.1063/1.123791 · doi-reference
10.1007/3540095950_9
10.1007/3540095950_9 · doi-reference