Abstract
In this study, the Monte Carlo method was employed to simulate radiation damage in β-Ga2O3 induced by Si+ ion implantation. By optimizing implantation energy and fluence, a uniform Si concentration of ∼1 × 1018 cm−3 was achieved across a depth range of 0.1–0.5 μm. As implantation energy increased, the fraction of total energy deposited via ionization losses rose from 48.53% to 71.56%, while phonon-mediated and vacancy-related energy losses declined from 48.14% to 26.62% and from 3.33% to 1.83%, respectively. Concurrently, the maximum energy absorbed reached 40.86 eV/(Å ion) for Ga atoms and 34.89 eV/(Å ion) for O atoms. The peak values of total displacements per atom, gallium vacancies, and oxygen vacancies were 0.039 86, 1.6 × 1021 cm−3, and 1.8 × 1021 cm−3, respectively. Collectively, these results indicate that Si+ ion implantation inevitably introduces a high density of point defects in Ga2O3, which may severely degrade carrier mobility and impede electrical activation efficiency.