Study on Electrical Behavior of TiO2 and ZnO Nanostructures: Resistive Switching and State Retention Under Pressure and Temperature Conditions

TiO2 nanotubes and ZnO thin films were investigated as oxide-based memristive systems for resistive switching and state-endurance applications under variable environmental conditions. TiO2 nanotubes were synthesized by electrochemical anodization, while ZnO thin films were deposited on Ti substrates by DC magnetron sputtering. Structural, chemical, and morphological properties were examined by Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy. TiO2 exhibited a vertically aligned nanotubular morphology, whereas ZnO showed a granular thin-film surface. Electrical characterization was performed using Au top electrodes and Ti as the bottom electrode under atmospheric pressure and high-vacuum conditions, with temperature varied from 353 K down to 77 K. Both materials exhibited hysteretic current–voltage behavior associated with resistive switching, although their response was strongly influenced by morphology, defect distribution, and environmental conditions. TiO2 nanotubes showed stable high- and low-resistance states, with an ON/OFF ratio of approximately 4.65, indicating robust state endurance. The observed behavior was attributed to oxygen-vacancy-mediated transport, filament stabilization, and interface effects. These results highlight the relevance of comparing TiO2 and ZnO nanostructures for identifying oxide systems capable of maintaining resistive states under temperature and pressure variations, supporting their potential for low-power non-volatile memory applications.